PREPARATION AND PROPERTIES OF SOME COMPLEX OXIDES FOR THERMOELECTRIC ENERGY CONVERSION By Chang Liu A DISSERTATION Submitted to Michigan State University in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY Materials Science and Engineering 2012 ABSTRACT PREPARATION AND PROPERTIES OF SOME COMPLEX OXIDES FOR THERMOELECTRIC ENERGY CONVERSION By Chang Liu During the past decades, thermoelectric (TE) materials have received renewed attention for potential applications in power generation, waste heat harvesting and solid-state cooling/heating. With the introduction of new material systems and advanced preparation techniques, the performance of state-of-the-art candidate materials has been greatly improved. Oxide-based materials, as newcomers to this field, have attracted growing interests due to their low production cost, high thermal stability and low toxicity. In the present work, the author reports upon the following three oxides with complex crystal structures, with emphasis on the synthesis techniques and transport property study. In delafossite-type copper aluminum oxide (CuAlO2 ), magnesium was used as the dopant to substitute aluminum atoms to improve the compound’s high temperature performance. Powder processing and advanced sintering techniques were employed to fabricate bulk samples. Characterization results showed simultaneous improvement in the electrical and thermal properties of hot-pressed samples. Sodium-rich sodium cobalt oxide (Nax CoO2 ) was investigated for structural study and thermoelectric characterization. Both wet-chemical and electrochemical techniques were adopted to intercalate sodium ions into the compound, which is expected to improve cryogenic TE performance. Starting from the setup of Na battery, a in-situ Seebeck coefficient measuring system was proposed, based on the fact that precise sodium concentration control was successfully achieved. The focus of calcium cobalt oxide (Ca3 Co4 O9 ) is to develop an innovative synthesis approach. Using agarose as a template, a sol-gel chemistry route involving mild acetates salt were developed. Comparing to traditional solid-state reaction, finer product particles, lower reaction temperature and more effective doping were achieved. Stoichiometric and Yb-doped samples were successfully prepared and characterized. Our study confirmed that oxides are a promising category of materials for a wide range of thermoelectric applications. Even though they are not as sophisticated as traditional TE materials at present, they showed great potential and interesting physical properties that would attract interests towards future research. Copyright by CHANG LIU 2012 To my parents, for giving me life and all the amazing things that come with it. And To Yushu, for being the most amazing of them all. v ACKNOWLEDGMENTS Pursuing a doctoral degree is not just about exploring into the scientific field. It is also, if not more, an evolution of an individual’s understanding about himself/herself. Throughout this journey, no one can stand alone to face the pain, confusion and hesitation. Luckily, there have been a lot of helping hands along my way, pointing out the direction and raise me up. Hereby, I would like to acknowledge them with my sincerest appreciation. It has been great honor and precious experience to work with Dr. Donald Morelli. I learned from him not only experimental skills and research abilities, but also positive attitudes and kindness. I am also very grateful to my committee members Dr. Eldon Case, Dr. Tim Hogan and Dr. Jeff Sakamoto for their support and guidance throughout the program. I would like to thank my lab-mates Dr. Ponnambalam Vijayabarathi, Dr. Long Zhang, Dr. Chen Zhou, Dr. Eric Skoug, Hui Sun, Xu Lu, Hao Yang, Gloria Lehr, Steve Bonna for their help during my study. I would also like to express my thank to my collaborators Dr. Fei Ren, Dr. Hsin Wang, Colin Blakely, Ezhiylmurugan Rangasamy, Travis Thompson, Peng Gao, Robert Schmidt, Dr. Bhanu Mahanti, Dat Do, Ed Timm, Karl Dersch and Brian Wright for their generous assistance and special thank to Dr. Jihui Yang for his enlightenment and advice. Last but not least, I am extremely thankful to Bo Xu and Shaowen Ji, Chenling Huang and Jinglei Xiang, my dearest friends, for helping me get through the most difficult times and become a stronger person. vi PREFACE My major research interest in materials development is to incorporate novel techniques to achieve higher preparation efficiency and better material performance. In the present work on thermoelectric oxides, my research covered a relatively wide range of material systems, pursuing distinct research goals and involving a variety of synthesis methods. I choose not to arrange all the preparation processes into one introductory chapter, as otherwise it would be inconvenient for the readers to navigate among chapters. Instead, I present a general introduction of contemporary material fabrication strategies and characterization techniques in an individual chapter, and distributed detailed preparation methods in respective chapters with corresponding materials systems, for a smoother reading experience. In addition to my primary work on the complex oxide thermoelectrics, I also investigated a full-Heusler type alloy Fe2 VAl. It is included in this book as an appendix. vii TABLE OF CONTENTS LIST OF TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix LIST OF FIGURES . . . . . . . . . . . . . . . . . x . . . . . . . . . . . . . . . . . Chapter 1 Introduction to Thermoelectricity 1.1 Thermoelectric Effects and Applications . . 1.2 Efficiency of Thermoelectric Modules . . . . 1.3 Electrical and Thermal Transport Properties . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 6 7 Chapter 2 Development in Thermoelectric Materials 2.1 New Materials and Approaches . . . . . . . . . . . . 2.2 Oxide Thermoelectrics . . . . . . . . . . . . . . . . . 2.2.1 Motivation of Present Work . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 16 18 Chapter 3 Experimental Techniques . . . . 3.1 Sample Preparation . . . . . . . . . . . . . 3.1.1 Powder Processing . . . . . . . . . 3.1.2 Sintering . . . . . . . . . . . . . . . 3.2 Characterization Principles and Techniques 3.2.1 Structural Analysis . . . . . . . . . 3.2.2 Transport Property Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 19 20 22 22 22 23 Chapter 4 Copper Aluminum Oxide . . . . . . . . . . 4.1 Background and Motivation . . . . . . . . . . . . . . 4.2 Experimental Details . . . . . . . . . . . . . . . . . . 4.3 Results and Discussion . . . . . . . . . . . . . . . . . 4.3.1 Composition and Structural Characterization 4.3.2 Transport Property Measurement . . . . . . . 4.4 Summary and Future Work . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 27 28 29 29 34 37 Chapter 5 Sodium Cobalt Oxide . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1 Background and Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2 Wet-chemical Intercalation Study . . . . . . . . . . . . . . . . . . . . . . . . 40 40 43 viii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 45 47 51 51 54 55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 57 59 62 62 68 Conclusions and Future Work . . . . . . . . . . . . . . . . . . . . 69 APPENDICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Appendix A Iron-Vanadium-Aluminum . . . . . . . . . . A.1 Background and Motivation . . . . . . . . . . . . . . A.2 Experimental Details . . . . . . . . . . . . . . . . . . A.3 Results and Discussion . . . . . . . . . . . . . . . . . A.3.1 Composition and Structural Characterization A.3.2 Transport Property Measurement . . . . . . . A.4 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 74 74 76 76 76 81 . . . . . . . . . . . . . . . . . 85 5.3 5.4 5.2.1 Experimental Details . . . . . . . . . . . . . . . . . . . 5.2.2 Composition and Structural Analysis . . . . . . . . . . 5.2.3 Transport Property Characterization . . . . . . . . . . Electrochemical Intercalation Study . . . . . . . . . . . . . . . 5.3.1 Experimental Details . . . . . . . . . . . . . . . . . . . 5.3.2 Proposed in-situ Seebeck coefficient Measuring System Summary and Future Work . . . . . . . . . . . . . . . . . . . Chapter 6 Calcium Cobalt Oxide . . . . . . . . . 6.1 Background and Motivation . . . . . . . . . . . 6.2 Experimental Details . . . . . . . . . . . . . . . 6.3 Results and Discussion . . . . . . . . . . . . . . 6.3.1 Calcination Condition and Doping Study 6.4 Summary and Future Work . . . . . . . . . . . Chapter 7 BIBLIOGRAPHY . . . . . . . . . . . . . ix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LIST OF TABLES Table 6.1 Density of hot-pressed (Ca1-x Ybx )3 Co4 O9 samples, where M, ρ0 , ρ represent molecular weight, theoretical density and actual density. . x 68 LIST OF FIGURES Figure 1.1 Figure 1.2 Figure 1.3 Figure 1.4 Annual world energy consumption from 1820 to 2010. Reproduced from [1] and [2]. For interpretation of the references to color in this and all other figures, the reader is referred to the electronic version of this dissertation. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Two operation modes of thermoelectric uncouples: (A) power generator mode and (B) thermoelectric active cooler mode . . . . . . . . 4 Estimated temperature-dependent efficiency for thermoelectric devices with different ZT values: (red) ZT = 0.3, (orange) ZT = 1.0, (green) ZT = 2.0, (blue) ZT = 8.0, (purple) ZT = ∞. (A) Power generator mode and (B) Refrigerator mode . . . . . . . . . . . . . . 7 Intercorrelation between Seebeck coefficient, electrical conductivity, thermal conductivity and ZT with carrier concentration in a classic semiconductor. Reproduced from [3]. . . . . . . . . . . . . . . . . . 10 Figure 2.1 ZT versus temperature of some important materials at their peak performance in an chronologically order: (a) Yb0.2 Co4 Sb12 , (b) PbTe, (c) SiGe, (d) AgSbTe2 -GeTe (TAGS), (e) Bi2 Te3 , (f) CeFe4 Sb12 , (g) CsBi4 Te6 , (h) AgPb18+x SbTe20 (LAST), (i) Yb14 MnSb11 , (j) Ag(PbSn)m SbTe2+m (LASTT), (k) Ybx Ga8-x Ga16 Ge30 , (l) Tl-PbTe, (m) Hf0.6 Zr0.4 NiSn0.98 Sb0.02 (half-Heusler), (n) NaPb20 SbTe22 (SALT), (o) Fe4 Sb12 , (p) Zn4 Sb3 , (q) Ba0.08 La0.05 Yb0.04 Co4 Sb12 (Skutterudites) and (r) PbTe-PbSe. . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 2.2 Electronic density of states for a) RuAl2 and b) Fe2 VAl. Near the fermi energy level, a) shows a real gap due to hybridization; b) shows a deep well, or a pseudo-gap. Figure reproduced from [4] [5]. . . . . 15 Schematic DOS in materials with different dimensions: 3-D bulk materials, 2-D nanofilm, 1-D nanowire and 0-D quantum dots. Reproduced from [6] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 2.3 xi Figure 2.4 ZT of recently developed thermoelectric oxides: (a) Ca3 Co4 O9 whisker, (b) NaCo2 O4 , (c) Bi2 Sr2 Co2 Oy whisker, (d) NaM2 O4 (M=Co, Cu), (e) NaCo2 O4 , (f) NaCo2 O4 , (g) In2 O3 -SnO2 , (h) MMnO3 (M=Ca, Bi), (i) CaMO3 (M=Mn, In), (j) ZnO-Al, (k) SrMO3 (M=Ti, Nb), (l) ZnO-Al nanovoid, (m) ZnO-Al nanovoid. Reproduced from [7] . . 18 Figure 3.1 Schematic flowchart of typical sol-gel synthesis process of powders . 21 Figure 3.2 Schematic illustration of intercalation. Ions can be extracted (A) or inserted (B) between layers structures. . . . . . . . . . . . . . . . . . 21 Figure 3.3 Sample wiring schematic diagram in a steady-state cryostat . . . . . 24 Figure 4.1 XRD patterns of as-fired Cu1-x Mgx AlO2 (0% x 10%) powders . . 30 Figure 4.2 XRD patterns of cold-pressed Cu1-x Mgx AlO2 (0% x 10%) . . . . . 32 Figure 4.3 XRD patterns of hot-pressed Cu1-x Mgx AlO2 (0% x 10%) . . . . . 33 Figure 4.4 XRD patterns of PECS treated Cu1-x Mgx AlO2 (0% x 10%) . . . . 34 Figure 4.5 SEM images (gentle-beam mode) of hot-pressed CuAlO2 (A), hotpressed CuAl0.98 Mg0.02 O2 (B), hot-pressed CuAl0.925 Mg0.075 O2 (C), PECS-sintered CuAlO2 (D), PECS-sintered CuAl0.98 Mg0.02 O2 (E) and PECS-sintered CuAl0.925 Mg0.075 O2 (F). . . . . . . . . . . . . . 35 Figure 4.6 Electrical resistivity of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) . . 36 Figure 4.7 Seebeck coefficient of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) . . . 37 Figure 4.8 Power factor of of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) . . . . . 38 Figure 4.9 Thermal diffusivity of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) . . . 38 Figure 4.10 Thermal conductivity of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) . 39 Figure 4.11 ZT of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) . . . . . . . . . . . . 39 Figure 5.1 Crystal structure of Nax CoO2 [8] . . . . . . . . . . . . . . . . . . . . 41 Figure 5.2 Phase diagram of Nax CoO2 ; reproduced from [9] . . . . . . . . . . . 42 xii Figure 5.3 Figure 5.4 XRD patterns of Nax CoO2 powders with different nominal starting sodium concentration and PECS-sintered Nax CoO2 (x=0.8) . . . . . 45 XRD patterns of Nax CoO2 (x=1.0) as-fired powders and PECS treated pellets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Figure 5.5 Electrical resistivity of (A) PECS treated Na0.74 CoO2 , (B) wet-chemical intercalated and PECS treated Na1.0 CoO2 and reported S-Nax CoO2 : (1) x≈0.71, (2) x≈0.75, (3) x≈0.80, (4) x≈0.85, (5) x≈0.88, (6) x≈0.89, (7)x≈0.96, (8) x≈0.97, (9) x≈0.99 and (10) x≈1.0 . . . . . 47 Figure 5.6 Seebeck coefficient of (A) PECS treated Na0.74 CoO2 , (B) wet-chemical intercalated and PECS treated Na1.0 CoO2 and reported S-Nax CoO2 : (1) x≈0.71, (2) x≈0.75, (3) x≈0.80, (4) x≈0.85, (5) x≈0.88, (6) x≈0.89, (7)x≈0.96, (8) x≈0.97, (9) x≈0.99 and (10) x≈1.0 . . . . . 49 Figure 5.7 Thermal conductivity of (A) PECS treated Na0.74 CoO2 , (B) wetchemical intercalated and PECS treated Na1.0 CoO2 and reported S-Nax CoO2 : (1) x≈0.71, (2) x≈0.75, (3) x≈0.80, (4) x≈0.85, (5) x≈0.88, (6) x≈0.89, (7)x≈0.96, (8) x≈0.97, (9) x≈0.99 and (10) x≈1.0 50 Figure 5.8 ZT of (A) PECS treated Na0.74 CoO2 , (B) wet-chemical intercalated and PECS treated Na1.0 CoO2 and reported S-Nax CoO2 : (1) x≈0.71, (2) x≈0.75, (3) x≈0.80, (4) x≈0.85, (5) x≈0.88, (6) x≈0.89, (7)x≈0.96, (8) x≈0.97, (9) x≈0.99 and (10) x≈1.0 . . . . . . . . . . . . . . . . 51 Original battery setup using cast Na0.74 CoO2 powders and sodium metal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Improved T-cell battery setup using Na0.74 CoO2 as both working and counter electrodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Starting and stopping voltage plotted on a complete discharge curve, reproduced from [10] . . . . . . . . . . . . . . . . . . . . . . . . . . 54 (a) XRD patterns of Na0.74 CoO2 before (blue curve) and after (red curve) electrochemical intercalation. (b) shift of the primary peak towards the higher angle . . . . . . . . . . . . . . . . . . . . . . . . 55 Figure 5.13 Proposed in-situ Seebeck coefficient measuring system . . . . . . . . 56 Figure 6.1 Chemical formula of Agarose . . . . . . . . . . . . . . . . . . . . . . 60 Figure 5.9 Figure 5.10 Figure 5.11 Figure 5.12 xiii Figure 6.2 Figure 6.3 Figure 6.4 Figure 6.5 Sol-gel synthesis of Ca3 Co4 O9 : (A) solution, (B) gel, (C) calcined powders, (D) sintered pellet . . . . . . . . . . . . . . . . . . . . . . 61 XRD pattern of solid-state reaction Ca3 Co4 O9 powders fire at various temperature. Asterisks indicate impurity peaks identified as unreacted Co3 O4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 XRD pattern of sol-gel synthesis Ca3 Co4 O9 powders fire at various temperature. Asterisks indicate impurity peaks identified as unreacted Co3 O4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 XRD pattern of as-fired, PECS treated and annealed Ca3 Co4 O9 powders . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Figure 6.6 XRD patterns of undoped, 2% and 5% Yb doped (Ca1-x Ybx )3 Co4 O9 fired at 850 ◦ C and 900 ◦ C via solid state reaction. Blue asterisks indicate unreacted Yb2 O3 and red asterisks indicate Ca3 Co2 O6 phase. 66 Figure 6.7 XRD patterns of undoped, 1%, 2%, 4%, 8% and 15% Yb doped (Ca1-x Ybx )3 Co4 O9 fired at 850 ◦ C via sol-gel synthesis. Asterisks indicate impurity phases. . . . . . . . . . . . . . . . . . . . . . . . . 67 Figure A.1 High voltage electric arc-melter . . . . . . . . . . . . . . . . . . . . . 75 Figure A.2 XRD patterns of (Fe1-x Cox )2 VAl (5% x 40%) . . . . . . . . . . . 77 Figure A.3 Seebeck coefficient of (Fe1-x Cox )2 VAl (5% x 40%) . . . . . . . . . 78 Figure A.4 Electrical resistivity of (Fe1-x Cox )2 VAl (5% x 40%) . . . . . . . . 79 Figure A.5 Power factor of (Fe1-x Cox )2 VAl (5% x 40%) . . . . . . . . . . . . 80 Figure A.6 Total thermal conductivity of (Fe1-x Cox )2 VAl (5% x 40%) . . . . 81 Figure A.7 Electronic thermal conductivity of (Fe1-x Cox )2 VAl (5% x 40%) . . 82 Figure A.8 ZT of of (Fe1-x Cox )2 VAl (5% x 40%) . . . . . . . . . . . . . . . . 83 xiv Chapter 1 Introduction to Thermoelectricity The energy consumption of human society has grown substantially, especially since the 1940s (Figure 1.1). In contrast, traditional and primary energy resources, such as oil and coal, are draining away with the increasing demand. This contradiction is putting on increasing pressure on every aspect of human society and placing an urgent call for solutions. One approach to achieve the goal is to discover new energy resources. The development of solar, wind, nuclear and biomass energy has shown promising progress, even though none of them can compete with the cost and convenience of fossil fuels. An alternative answer to the same question would be enhancing efficiency in the use of existing energy resources. In most cases, poor efficiency occurs due to heat loss during energy transformation. Taking combustion engine vehicles for example, only up to 30% of total energy effectively serves as driving power, while the majority is lost in the form of hot exhaust. Therefore, a big opportunity is presented to reuse this lost energy through waste heat recovery. The emergence of thermoelectricity (TE) technology provides almost the only feasible option to realize this idea. During the past decades, thermoelectric technology has received increasing 1 EJ (1018 J) per year 600 500 400 300 200 100 0 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 Year Figure 1.1: Annual world energy consumption from 1820 to 2010. Reproduced from [1] and [2]. For interpretation of the references to color in this and all other figures, the reader is referred to the electronic version of this dissertation. attention and scrutiny for potential applications in energy harvesting, as well as solid-state heating and cooling. Every story has a beginning. For thermoelectricity, it all starts with the fundamental thermoelectric effects discovered centuries ago. 1.1 Thermoelectric Effects and Applications In 1821, T. J. Seebeck firstly discovered that electrical potential can be established at a junction of two dissimilar metals when the circuit was placed in temperature gradient [11]. Electric carriers, electrons or holes, diffuse from the hot end to the cold end and create a voltage difference under the influence of temperature gradient. The migration stops once a balance is reached between the thermal driving force and electrical fields. Shown in Equation 1.1, the ratio of Seebeck voltage to the temperature difference is defined as Seebeck coefficient, 2 which is also known as thermoelectric power or thermopower. S= ∆V ∆T (1.1) The widely used thermocouples for temperature measurement make use of this effect. In most cases, systems with single charge carriers display better TE performance as carriers with opposite charge would cancel each other out in double carriers systems, as is shown in Equation 1.2, where σ p and σ n are electrical conductivity contribution of holes and electrons. S p and S n are Seebeck coefficient contribution of hole and electrons, and are opposite in sign. S= σp Sp + σn Sn σp + σn (1.2) A reverse effect was found by J. Peltier a decade later [12]. He observed that, when ˙ electric current passed through a heterogeneous junction, certain amount of heat Q can be released or absorbed depending on the current direction. This thermodynamically reversible Peltier effect is similar but fundamentally distinct from Joule heating, which is irreversible. The Peltier coefficient was defined to indicate the ratio of generated heat to the passing current, following Equation 1.3. Based on this effect, solid-state cooling or heating modules can be used for heat management. Π= ˙ Q I (1.3) In 1851, the third TE effect was predicted by W. Thomson (Lord Kelvin), which repre3 sents a reversible heating/cooling effect produced by electric current in magnetic field. This effect was afterwards demonstrated and recognized as the Thomson effect, which describes the heating/cooling when current passes through a conductor in temperature gradient. He also revealed the interconnection among the three main TE effects by proposing the first (Equation. 1.4) and second (Equation. 1.5) Kelvin Relations. µ = T dS/dT (1.4) Π T (1.5) S= In addition, the Nernst Ettingshausen effect can happen when a conductor with passing electric current is placed in an environment where magnetic field and temperature gradient are present at the same time. Heat Source n-type _ Active Cooling p-type n-type _ + _ + _ + _ p-type + _ + + Heat Sink Heat Rejection (A) (B) Figure 1.2: Two operation modes of thermoelectric uncouples: (A) power generator mode and (B) thermoelectric active cooler mode The application of thermoelectric energy generator (TEG) [Figure 1.2, A] started with 4 deep-space missions, which requires reliable, compact and rugged power source. Contemporary TE materials, including lead telluride and GeTe-AgSbTe alloys (TAGS), has been used to fabricate radioisotope thermoelectric generators (RTG) for spacecrafts. These attributes also attracted automotive manufacturers to use TE modules for waste heat retraction in combustion engine powered vehicles. A exhaust pipe mount two-staged TE module has been demonstrated by General Motors on its Chevrolet Suburban [13]. A similar energy recovery TEG was also proposed by BMW as a key component of its EfficientDynamics technology to improve fuel efficiency [14]. The Peltier solid-state coolers [Figure 1.2, B] are especially attractive because there are no moving parts or liquid refrigerant involved the these types of devices, which demonstrate higher reliability and flexibility. The products can be made small in size and are easy to tailor for desired use environment, such as automobiles. Even though the low efficiency remains a major obstacle, Peltier modules has been deployed in commercial products. BMW was the first among car manufacturers to have started to use TE coolers in car seats to achieve targeted area climate control [14]. Going beyond bulk materials, applications in small dimension have also been explored [15]. A thin film superlattice coating was demonstrated to realize in active chip-scale heat management, with higher efficiency than conduction cooling and higher reliability than liquid based solutions. A concept of on-chip heat recycle module was also proposed and tested recently [16] [17]. 5 1.2 Efficiency of Thermoelectric Modules Even with all the benefits, whether the industry and the general market would accept thermoelectric modules is simply decided by their efficiency. As for cooling/heating devices, TE products are expected to exhibit comparable performance to compete with conventional technologies. The conversion efficiency of any heat engine is limited by the Carnot efficiency ηc . Therefore the efficiency of a thermoelectric power generator can be expressed as a fraction of ηc in Equation 1.6: η = ηc · 1 + ZTavg − 1 (1.6) 1 + ZTavg + Tcold /Thot where ZT is the figure-of-merit, indicating the properties of thermoelectric materials (see below). In the heat-pump mode (refrigeration), the coefficient of performance (COP ) of thermoelectric modules can be expressed as Equation 1.7: COP = Tavg Q = · W Thot − Tcold 1 + ZTavg − 1 1 + ZTavg + 1 − 1 2 (1.7) where T avg =(T cold +T hot )/2 is the average temperature. Supposing that, in both senarios, ZT avg is temperature-independent and Tcold is fixed at 300 K, the coefficient of conversion for a generator and the COP for a refrigerator versus ZT are plotted in Figure 1.3. It is generally accepted that, to compete existing technologies, ZT is expected to exceed 2.0 to justify the manufacturing cost of materials and devices for practical applications. 6 Conversion Efficiency 0.8 0.6 0.4 0.2 0.0 0 200 400 600 800 1000 1200 1400 T K (A) 3.5 3.0 COP 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 T K 400 500 (B) Figure 1.3: Estimated temperature-dependent efficiency for thermoelectric devices with different ZT values: (red) ZT = 0.3, (orange) ZT = 1.0, (green) ZT = 2.0, (blue) ZT = 8.0, (purple) ZT = ∞. (A) Power generator mode and (B) Refrigerator mode 1.3 Electrical and Thermal Transport Properties Figure-of-merit ZT = σ · S2 ·T κe + κl 7 (1.8) A dimensionless figure-of-merit (ZT ) is expressed as Equation 1.8 as an unit-less indicator of the TE property of a single material. As was mentioned, this is the single parameter that characterizes the performance of a material. Generally, ideal TE materials possess high electrical conductivity, larger Seebeck coefficient and low thermal conductivity to exhibit large ZT. Higher operation temperature is also a positive factor in increase the parameter. Strategies to enhance ZT will be discussed in detail in the next chapter. Electrical Conduction Electrical conductivity σ can be expressed as Equation 1.9: σ = neµ (1.9) where n is carrier concentration, e is the electronic charge and µ is the carrier mobility. Electrical conductivity is proportional to carrier concentration. On the other hand, the Seebeck coefficient of a strongly degenerated system with single parabolic band model is given in the Pisarenko relation in Equation 1.10 [18]: 8π 2 k 2 π S= · m∗ T ( )2/3 3n 3eh2 (1.10) where h is Planck’s constant, k is Boltzmann’s constant, m∗ is the carrier effective mass and n is the carrier concentration. Seebeck coefficient therefore is inversely to the carrier concentration. As we pursuit large total electronic contribution, defined as the power factor (σS 2 ), an optimized n is required to balance the two parameters. 8 Thermal Conduction Total thermal conductivity κ includes two parts: lattice thermal conductivity κl and electronic thermal conductivity κe . κl is phonon transfer in the form of lattice vibrations, while κe is caused by heat-carrying charge carrier migration, which is strongly tied to electrical conductivity. κe = L0 σT (1.11) κe can be calculated using the empirical Wiedemann-Franz law (Equation 1.11). L0 is the Lorenz number, which equals 2.44 × 10−8 W ΩK −2 . As κ is a measurable parameter, κl can be separated following Equation 1.12. κl = κ − κe (1.12) Carrier Concentration and Mobility As was discussed, transport properties are all inherently related to the electronic carrier concentration. As shown in Figure 1.4, to get high σ without hurting S, improving carrier mobility is preferred to increasing carrier concentration. Therefore, good TE materials are usually semiconductors with moderate carrier concentration (1019 -1020 cm-3 ). 9 𝛔 ZT arbitrary units |S| 𝜅 1019 1020 Carrier Concentration (cm-3 ) Figure 1.4: Intercorrelation between Seebeck coefficient, electrical conductivity, thermal conductivity and ZT with carrier concentration in a classic semiconductor. Reproduced from [3]. 10 Chapter 2 Development in Thermoelectric Materials In this chapter, some classic approaches and new concepts in thermoelectric material development are introduced, along with representative materials systems. Special attention is given to oxides with complex crystal structure. A brief overview of the benefits and challenges of this new category of materials is presented. 2.1 New Materials and Approaches Leaving the device construction steps out of account, all of the questions in TE technology have been boiled down to the search for materials with large ZT. The dilemma, as was previously discussed, lies in the interrelation between fundamental physical transport properties. Traditionally, effort was made to reach a compromise among those parameters to achieve an optimized integration. Starting from the 1990s, however, novel materials have been developed with the arrival of new ideas, strategies and preparation techniques. A summary of the 11 peak performance versus temperature of some important thermoelectric materials is shown in Figure 2.1: 1.8 (h) 2004 (r) 2011 (n) 2009 1.6 (q) 2011 (j) 2006 1.4 (l) 2008 ZT (d) 1972 1.2 (o) 2010 (a) 1855 (p) 1997 1.0 (e) 1995 0.8 (k) 2008 (i) 2006 (m) 2009 (b) 1957 (f) 2011 (c) 1964 (g) 2004 200 400 600 800 1000 1200 1400 Temperature (K) Figure 2.1: ZT versus temperature of some important materials at their peak performance in an chronologically order: (a) Yb0.2 Co4 Sb12 , (b) PbTe, (c) SiGe, (d) AgSbTe2 GeTe (TAGS), (e) Bi2 Te3 , (f) CeFe4 Sb12 , (g) CsBi4 Te6 , (h) AgPb18+x SbTe20 (LAST), (i) Yb14 MnSb11 , (j) Ag(PbSn)m SbTe2+m (LASTT), (k) Ybx Ga8-x Ga16 Ge30 , (l) Tl-PbTe, (m) Hf0.6 Zr0.4 NiSn0.98 Sb0.02 (half-Heusler), (n) NaPb20 SbTe22 (SALT), (o) Fe4 Sb12 , (p) Zn4 Sb3 , (q) Ba0.08 La0.05 Yb0.04 Co4 Sb12 (Skutterudites) and (r) PbTe-PbSe. In 1995, the concept of Phonon Glass/Electron-Crystal (PGEC) materials was proposed by Slack [19]. In ideal PGEC materials, phonons are expected to propagate in the manner as if they are in amorphous materials, such as glasses. Meanwhile, they retain the electrical conduction behavior as crystals. The thermal and electric contribution are expected to be separately tunable. Even though perfect materials with such behavior are not yet available, progress has been made to bring the idea closer to reality. 12 Minimization of Thermal Conductivity Forming solid solutions through atomic substitution is a traditional way to reduce lattice thermal conductivity. Bigger or heavier atoms induce size and mass contrast between dopants and hosts atoms and break down matrix regularity. Phonons are therefore strongly scattered by the increased complexity in the solid-solutions [20]. Usually two or more compounds sharing similar crystal structures are selected, as in this case a wide solid-solution range is expected. This method has been widely applied to materials that already possess good thermoelectric performance while further reduction of thermal conductivity is needed, such as Bi2 Te3 -Bi2 Se3 [21] and PbTe-PbSe [22]. Recent discovery of copper-based diamondlike compounds revealed a new approach: discovering materials with low intrinsic thermal conductivity [23]. These compounds usually consist naturally complex structures, large unit cells and heavy elements. By intentionally creating doubled, tripled or even quadrupled unit cells, complex crystal structures with many atoms per unit cell can be realized, which can contribute to additional thermal conductivity reduction [24]. Another category of materials with phonon scattering agents are skutterudite [25] [26] and calthrates [26]. These compounds possess open space in their crystal structure. Some external atoms, such as rare-earth elements, can be deliberately inserted into those hollow cages to become ”rattlers”. These weakly bonded atoms can effectively disturb phonon propagation and provides additional reduction in thermal conductivity [27]. Although electrical properties may be affected by the phonon scattering atoms, the electron carrier transport properties is usually reduced by less than one magnitude, which is lower than that of thermal conductivity reduction and beneficial to the improvements of ZT. Advanced powder processing techniques, involving energized ball-milling and rapid sin13 tering, can produce smaller grain size and finer microstructure, which can introduce more interfaces that serve as phonon scattering agents [28]. Enhancement of Power Factor Admitting that great progress has been made to in minimizing materials’ thermal conductivity, it can never be indefinitely reduced. The limits of lattice thermal conductivity comes from the minimum phonon mean free paths, which can be smaller than the interatomic spacing [29]. Therefore, the enhancement of power factor is an equivalently important approach. S= π2k2T · 3e d ln σ(E) dE (2.1) E=Ef Mott equation (Equation 2.1) provides a simple description of the Seebeck coefficient [30]. Assuming that electron relaxation time is constant, the density of states (DOS) is proportional to σ(E). Subsequently S can be greatly promoted if abrupt change of the DOS happens near the Fermi energy level. Such band structures do exist in some bulk materials, caused by hybridization between transition metals and main group elements. As shown in Figure 2.2, the DOS near the Fermi level displays sharp feature, creating a deep gap in narrow-band semiconductors such as RuAl2 [4], or a pseudo-gap in semimetals such as Fe2 VAl [5]. Due to this hybridization, unusual transport properties and enhanced TE performance are expected to appear. The author has conducted a research project on the doping effect study in Heusler-type Fe2 VAl alloy. The results are presented in tthe Appendix A. For polycrystalline materials, defects near the grain boundary can cause serious reduction in electron transport. By improving the electrical conduction near the boundaries, higher 14 semimetal-like resistivity. the of the major objectives proposal is to gain a gain a semimetal-like resistivity. One of One major objectives of this of this proposal is to deeper understanding of this hybridization the nature nature of electronic the neighborhood of understanding of this hybridization gap andgap and theof electronic states instates in the neighbor the pseudogap through detailed transport investigations both both experimental the pseudogap region region through detailed transport investigations experimentally and theoretically and careful electronic structure calculations. theoretically and careful ab initioab initio electronic structure calculations. a) (a) a) 4 3 2 1 0 4 Ef 3 2 1 0 -10 -5 -10 -5 0 0 5 5 10 10 10 10 Density of States (states/eV) 5 Density of States (states/eV) Density of States (states/eV) Density of States (states/eV) Density of States (states/eV) Density of States (states/eV) 5 b) b) (b) 8 8 6 4 2 Ef 6 4 2 0 0 -10-5 -10 Energy (eV) Energy (eV) Energy (eV) -5 0 0 5 5 Energy (eV) Energy (eV) Energy (eV) Figure 2.2: Single particle states statesRuAl2 a) RuAland b) TheVAl. The former is an example of an inter Figure 16. Electronic density of of a) for a) RuAl 2 and b) Fe2 former is an fermi energy Figure 16. Single particle density ofdensityfor states for and b)2Fe2VAl. Fe2 VAl. Near theexample of an intermetallic level, a)true hybridization-gap; an example of a b) shows aor a pseudo-gap. Data adapted from with a shows a real the due the latter an example well, deep well, a pseudo-gap. Data adapted from Wei with a true hybridization-gap; gap latterto hybridization; deep of a deep well, oror a pseudo-gap. Figure Weinert and reproduced from [4] [5]. Watson62.Watson62. Criticalfactor can to obtaining the As was reported in some intermetallicwe the such as location o to obtaining the unusual transport behavior that we seek is seek is the power Critical also be achieved. unusual transport behavior that alloys, location of EF (in Figure 16 indicated by the line at line at since the electrons near the Fermi Fermi an Figure 16 indicated by the vertical vertical E = 0), E = 0), since the electrons near thelevel in lev CoSi [31] [32] and Ni3 Al [33], boron segregation along the grain boundaries can improve the 28 28 mechanical strength and boundary conductivity. Silver particle inclusion at grain boundaries have also been reported in a variety of materials to improve interfacial conduction and therefore greatly reduced electrical resistivity [34]. 3-D 2-D DOS DOS DOS DOS Nanostructure Inclusion 1-D 0-D Figure 2.3: Schematic DOS in materials with different dimensions: 3-D bulk materials, 2-D nanofilm, 1-D nanowire and 0-D quantum dots. Reproduced from [6] The concept of low dimensional materials was introduced to the thermoelectric commu15 nity by Hicks and Dresslhaus in the 1990s [6]. Nanotechnology provides a viable approach to include nano-scale microstructures during materials fabrication and can simultaneously achieve optimization in thermal conductivity and power factor. Theoretical minimum value of lattice thermal conductivity can be estimated by kl = 1/3Cv l, where the phonon mean free path l is limited by the interatomic spacing. By reducing materials dimension to 2-D (quantum wells), 1-D (quantum wires) or even 0-D (quantum dots), lattice spacing can be pushed to the extent that they are comparable to interatomic distance (Figure. 2.3). S= π2k2T · 3e d ln g(E) d ln v 2 (E) d ln τ (E) + + dE dE dE (2.2) E=Ef Expanded Mott and Jones relation (Equation 2.2) shows the possibility to improve electrical properties. The power factor enhancement can be realized when Fermi energy level is positioned near a rapid change in the DOS, as shown in Figure 2.3. Energy filtering effect has also been proposed and demonstrated to serve the same purpose by properly adjusting the mechanism of electron scattering in nano-structured materials [35]. 2.2 Oxide Thermoelectrics Most contemporary TE materials to date are binary or ternary chalcogenides and pnictides. In spite of their good properties, these materials have inevitable drawbacks. They are usually chemically or mechanically unstable at elevated temperature, which prevents them from achieving better performance with increased temperature gradient. Most of them are sensitive to oxidization, and therefore require extra packaging and insulation for practical use. In addition, the toxic and expensive elements they consist of make them less desirable 16 to manufacture. All these challenges have hindered the widespread use of thermoelectric technology. Yet they have also motivated pursuit for new candidate materials at the same time. Oxides have attracted great attention in recent years due to their thermal stability, nontoxicity and low production and maintenance cost. In addition, low density and good mechanical strength qualifies oxides as preferable materials in device construction. Although possessing large Seebeck coefficient, oxides have long suffered from poor electrical conductivity and high thermal conductivity. With the the discovery of large Seebeck coefficient in NaCo2 O4 [36], large power factor in single crystal Nax CoO2 [37] and low thermal conductivity in polycrystalline samples [38], development of oxide TE has received a strong boost over the past decades. More importantly, the concept of complex oxides involving nanoscale building blocks revealed a new class of materials. In simple systems, the inherently interrelated S, σ and κ are difficult to fine tune. With multiple atom species and crystalline fields in the complex hybrid structures, thermal and electrical properties may be individually adjusted with weaker intercorrelation. Recently reported ZT values of both p-type and n-type candidates are summarized in Figure 2.4. Current research of p-type TE oxides has focused on sodium and calcium based cobalt oxides and their derivative compounds [39]. The maximum ZT of single crystal NaCo2 O4 was reported to surpass unity in 2001 [40], while polycrystalline counterparts reached ZT =0.8 [41]. Single crystal and polycrystalline Nax CoO2 with various sodium concentration has been investigated for high-temperature TE applications. Calcium cobalt oxides (Ca3 Co4 O9 [42], Ca2 Co2 O5 [43]) and the modulated layered Bi2 M3 Co2 Oy (M = Sr, Ca, and Ba) also display promising performance and even better stability [44] [45]. In contrast, n-type materials have lagged behind in achieving large ZT. Al-doped ZnO, a wide gap semiconductor with simple 17 1.2 p-type - single crystal (c) p-type - polycrystalline 1 n-type - polycrystalline (a) (b) 0.8 (f) ZT (e) (m) 0.6 (d) (l) 0.4 (k) (j) 0.2 (g) 0 1992 (h) 1994 (i) 1996 1998 2000 2002 2004 2006 2008 Year Figure 2.4: ZT of recently developed thermoelectric oxides: (a) Ca3 Co4 O9 whisker, (b) NaCo2 O4 , (c) Bi2 Sr2 Co2 Oy whisker, (d) NaM2 O4 (M=Co, Cu), (e) NaCo2 O4 , (f) NaCo2 O4 , (g) In2 O3 -SnO2 , (h) MMnO3 (M=Ca, Bi), (i) CaMO3 (M=Mn, In), (j) ZnO-Al, (k) SrMO3 (M=Ti, Nb), (l) ZnO-Al nanovoid, (m) ZnO-Al nanovoid. Reproduced from [7] structure, offers competitive power factor compared to conventional materials, but limited by very high thermal conductivity [46]. Newly emerging heavily doped strontium titanium oxide (SrTiO3 ) and its layered derivatives (SrO)(SrTiO3 )m , however, show great potential in reaching better performance [47]. 2.2.1 Motivation of Present Work In this thesis, three p-type complex oxide-based systems are investigated as potential thermoelectric materials, with respective research goals and approaches. Polycrystalline samples were chosen due to the considerably lower preparation cost and lower thermal conductivity. 18 Chapter 3 Experimental Techniques In this chapter, an overview of techniques used to prepare polycrystalline thermoelectric oxides is presented. Characterization methods used to examine material structural properties and evaluate transport performance are briefly introduced, with emphasis on equipment setup and measuring principles. 3.1 Sample Preparation With active exploration of material systems for thermoelectric applications, various fabrication methods are utilized to produce single crystal and polycrystalline products. Commercially produced single crystals are usually grown from polycrystalline powders using the Czochralski process or the Bridgman technique [48]. Metallic compounds are usually produced via direct fusion of pure elements and annealing. Alternative methods, such as melt-spinning [49] and mechanical alloying [50], have been developed to finetune and improve the properties of existing material systems. 19 3.1.1 Powder Processing Solid-state reaction is the most widely used synthesis method in powder processing. Reactant powders were mixed according to desired stoichiometry using low-speed stationary mills or high-energy ball-milling. The former is convenient and effective in mixing, while the latter offers shorter processing time and additional particle size reduction effect. Inert gas atmosphere is required for oxygen or water sensitive samples during mixing. The precursor mixtures are then calcined at desired temperature in preferred gas environment to activate chemical reactions. Solid-state reaction is an economic and fast synthesis technique and was used to calcine reactant mixtures in all three projects. Due to the slow diffusion rate in solids, however, the reaction speed and product homogeneity are limited. In the CuAlO2 work, low-speed powder mixing, powder calcination and cold-pressing were carried out in Dr. Case’s lab at Michigan State University. Nax CoO2 and Ca3 Co4 O9 samples were processed using the SPEX SamplePrep 8000M mixer with glass vials and polyethylene grinding media. Sol-gel process is a wet-chemical technique, providing finer product particles and improved preparation efficiency. Owing to improved reaction interface and higher reactivity, sol-gel synthesis also has facilitated easier and more effective doping, which sometimes cannot be achieved through traditional solid-state reactions. Figure 3.1 demonstrats a typical sol-gel process. Reactants are first dissolved in clear solvent. Subsequently, a integrated network is formed with the help of binders/template. The as-formed gels are then dried to remove solvents in the precursor and turn to xerogels with much lower porosity. A pre-calcination step is required to burn out the organic components. The final product is obtained after calcination at desire temperature. Most reported sol-gel 20 1 2 Sol 3 Gel Reactant A Xerogel Reactant B 4 Pre-calcined Precursor Polymer Product Product Figure 3.1: Schematic flowchart of typical sol-gel synthesis process of powders processing methods involve harsh organic acid. In this research, we take a simpler approach with mild reactants include metal acetate salts, agarose and water. Chemical intercalation is a technique wildly used in battery technology. Strictly speaking, it serves to modify a well-set material system by inserting or extracting ions from a matrix under the influence of concentration gradient or electrical field. In layered structures like Nax CoO2 , or LiCoO2 , Na and Li ions can enter and leave the framework, as shown in Figure 3.2. Using either wet-chemical or electro-chemical approach, ions can be inserted from or extracted to a certain compound to reach desired ’doping’ level. Within certain limits, this is process can be viewed as reversible without damaging the structure. A B Figure 3.2: Schematic illustration of intercalation. Ions can be extracted (A) or inserted (B) between layers structures. 21 3.1.2 Sintering As-produced powders are consolidated into a bulk sample using a variety of sintering techniques. Cold-pressing, also know as pressureless sintering, is the most intuitive consolidation method. Powders were placed in stainless steel dies and pressed at room temperature to form loosely bonded green compacts. The compacts were then calcined above critical temperature to eliminate the pores between powder particles. Hot-pressing simultaneously applies pressure and heat to powders, resulting in more effective diffusion and higher final sample density. However, since both cold-pressed and hot-pressed take hours to ramp to target temperature, grain growth may occur and lead to augmented thermal conductivity in certain systems. In the CuAlO2 project, hot-pressing was performed by Dr. John Colling at Dr. Gopalan Srinivasan’s lab in Oakland University. Pulsed electric current sintering (PECS), also known as spark plasma sintering, applies pulsed DC current through powders pre-pressed in graphite or tungsten carbide dies. The internally generated heat, unlike conduction from external heating elements, enables greatly faster ramping rate and therefore shorter sintering time. Samples can preserve their fine microstructures while achieving high density. PECS processing was finished in Dr. Tim Hogan’s lab at Michigan State University. 3.2 3.2.1 Characterization Principles and Techniques Structural Analysis Powder X-ray Diffraction (XRD) served for crystal structure determination and phase identification. All samples were pulverized into fine powders and scanned using a Rigaku 22 MiniFlex II X-ray diffractometer(Cu Kα , λ=0.154 nm, 30kV, 15mA). Phase identification was accomplished with Jade XRD analysis software (version 9.0) and MDI mineral database, Scanning Electron Microscopy (SEM) was used for microstructure observation and phase detection. The Two field-emission scanning electron microscope (JEOL JSM-7500F). In gentle-beam (GB) mode, separated phases appear in distinct grey scale due to the different average molecular weight. Energy-dispersive X-ray spectroscopy (EDS) is also a good indication of phase separation based on atomic ratio measurement. SEM work was performed at the Center for Advanced Microscopy at Michigan State University. For more accurate results, which is crucial in determining the sodium concentration in Nax CoO2 , an inductively coupled plasma-mass spectrometry (ICP-MS) was used. Mr. Colin from the Department of Chemistry offered help in ICP analysis. 3.2.2 Transport Property Measurement Electrical Conductivity and Seebeck Coefficient Low-temperature measurement is carried out in a lab-built steady state cryostat system cooled by liquid nitrogen. A bar-shaped sample was first cut out of the as-made bulk pellets and attached to a copper base using silver epoxy (Figure 3.3). Two copper strips were glued using the same epoxy onto one side of the bar as probe contacts. Two type-T thermocouple were soldered onto the copper stripes. A metal-film resistor (Rh =1000 Ω) was wrapped with copper foil and adhered to the top of sample bar with the same silver epoxy. This type of epoxy is used because it is both electrically and thermally conductive. Finally, two current wires are attached at the top and the bottom of the sample. These wires are electrically isolated from the heater. The entire unit was sealed in a high vacuum (<10−5 23 Ih Heater Vh Copper foil Thot Is Voltage probes Sample Vs Tcold Copper base Figure 3.3: Sample wiring schematic diagram in a steady-state cryostat torr) chamber. Liquid nitrogen is flowed into the copper base, which is equipped with a temperature sensor and its own heater. Control of the base temperature is achieved using a temperature controller and balancing the cooling effect of liquid nitrogen with Joule heat from the base heater. Measurement of the transport properties is performed as follows: first, the base temperature is set to a specified value (say 80 K). Next, the sample current (I s ) is energized. The resulting resistive voltage V across the sample is detected using the copper legs of the two thermocouples. From the values of V and I s the resistivity of the sample is calculated using ρ = (V /Is )(A/L), where A is the cross-sectional area of the specimen and L is the distance between the voltage probes. The sample current is then turned off and the heater current is energized. Joule heat from the heater flows down the sample and results in a 24 temperature gradient along its length. When a steady-state condition is achieved, the temperature difference along the sample (∆T = Thot − Tcold ) is measured by measuring the voltages across the ”hot” and ”cold” thermocouples respectively, and using a calibration table to convert these values to temperatures. The thermal conductivity of specimen is then 2 given by κ = (Ih Rh /∆T )(L/A). Simultaneously, the Seebeck coefficient Vs /∆T is calcu- lated. Finally, the sample heater current is turned off, and the copper base temperature is set to the next value (say 90 K). In this way, curves of the temperature dependence of the three relevant thermoelectric parameters are determined. The experiment is controlled by a computerized LabView software sequence. S and σ are measured in the same manner using a commercial system (ULVAC ZEM-3) above 300 K. Thermal Conductivity As was discussed, thermal conductivity measurement below 300 K is carried out simultaneously in the cryostat. In contrast, in the high temperature measurement is executed in a different way to eliminate radiation loss. κ can be expressed as Equation 3.1, where α, ρ and c p are thermal diffusivity, density and specific heat capacity respectively. The density is obtained using the Archimedes law, and c p can be determined using differential scanning calorimetry (DSC). Thermal diffusivity is measured in a laser flash thermal diffusivity analyzer (LFA, Anter Flashline X-platform). Samples were sliced into thin disks with 1-2 mm in thickness. κ = α · ρ · cp (3.1) Alternatively, c p of solids with minimal electron contribution has good approximation 25 with the Dulong-Petit law when the solids are above their Debye temperature. N, R and M in Equation 3.2 refer to the number of atoms in one molecule, the ideal gas constant and molar mass of the molecule. Using this expression, we can estimate materials specific heat in the high temperature range with fairly accurate fit. Dr. Hsin Wang from the High Temperature Materials Laboratory (HTML) at Oak Ridge National Laboratory provided generous assistance in high-temperature transport property measurement. cp = Cp,m 3·R·N = M M (3.2) Carrier Concentration and Mobility Concentration and mobility of electrical carriers play an important role for us to understand samples’ transport mechanism. Low-temperate Hall measurement can be performed using a commercial apparatus, VersaLab from Quantum Design based on an assumption of one band model. Knowing sample thickness, Hall voltage and magnetic field, both parameters can be calculated following Equation 3.3 and 3.4: Ey V t 1 = H = jx B Ix B ne R µ= H ρ RH = 26 (3.3) (3.4) Chapter 4 Copper Aluminum Oxide Copper aluminum oxide (CuAlO2 ) is a delafossite-type compound with layered structure. It recently emerged as a new candidate for high-temperature thermoelectric applications. In the present research, magnesium was selected as a dopant to substitute for aluminum atoms and improve thermoelectric performance. Three different sintering techniques were adopted to prepare bulk materials for structural study and transport property measurement. The doping effect and preparation conditions are studied and discussed. 4.1 Background and Motivation Delafossite structure is named after French mineralogist Gabriel Delafosse by Friedel, who discovered copper iron oxide (CuFeO2 ) in 1873. Since then, a variety of compounds with similar crystal structure have been discovered and prepared. Some of them received close investigation for battery technologies and catalytic applications, including copper aluminum oxide (CuAlO2 ). It has been widely applied in the photocatalytic hydrogen generation in the form of transparent conductive oxides (TCOs) [51], thanks to its exceptional chemical 27 stability and small band-gap energy. Noticing these properties, Koumoto suggested CuAlO2 as a potential candidate for thermoelectric applications [52]. The delafossite structure belongs to quasi-two-dimensional crystal systems. CuAlO2 is constructed by alternative stacking of Al3+ O6 octahedra conducting sheets and monovalent Cu+ cations bonded in between. Depending on the stacking orientation, two different crystal configurations can be identified as the rhombohedral 3R-(R3m) polytype with three layers in one unit cell and the hexagonal 2H-(P6/mmc) polytype with two [53]. CuAlO2 is a natural p-type semiconductor with moderate band-gap energy on the order of 1.9 eV, which is relatively small among oxides [54]. In addition, its complex layered structure facilitates reduction of thermal conductivity. Previously, iron [55] and calcium [56] have been used as dopants to improve electrical conductivity. In this work, magnesium was chosen to substitute the aluminum sites. Given its similar atomic size to aluminum, higher doping level was expected to be reached for fine control over transport properties of this material. 4.2 Experimental Details A series of CuAlO2 powders with various level of of magnesium doping were produced using traditional solid-state reactions. Aluminum oxide (Al2 O3 , Baikowski, 0.35 µm), cuprous (I) oxide (CuO, Sigma-Aldrich, <5 µm) and magnesium oxide (MgO, Matheson, Coleman and Bell, 5 µm) powders were mixed according to nominal composition Cu1-x Mgx AlO2 (x= 0, 0.01, 0.02, 0.05, 0.075 and 0.1) with cylindrical alumina grinding media (12 mm in diameter and length) for 12 hours. The resultant mixtures were then dried in air at 353 K for 12 hours, spread onto rectangular alumina trays and fired in an electrical tube furnace (Carbolite CTF28 12/75/700) at 1393 K for 20 hours with a heating and cooling rate of 5 K/min. Continuous argon (Ar) flow of approximately 10 SCFH (cubic feet per hour at standard conditions) was applied during the entire reaction. As-fired powders were ground before consolidation. To produce bulk samples for transport characterization, three distinct sintering techniques were used. Cold-pressing was first applied. Approximately 4 g of as-prepared powders were pressed in stainless steel dies under a pressure of 23 MPa at room temperature, followed by 12 hour calcination under the same condition as powder preparation. A hotpressing treatment was also applied on the same powders. Samples were consolidated in air for 3 hours in a 10 mm graphite dies. Peak pressure and temperature were 27.6 MPa and 1323 K. In pulsed electric current sintering (PECS) process, as-prepared powders were prepressed in a half inch graphite dies and pressed in flowing argon. The samples were heated to 1473 K at a rate of 80 K/min, dwelled for 15 minutes in argon flow and naturally cooled down to room temperature. Pressure was ramped to 60 MPa at the rate of 30 MPa/min 5 minute after the temperature began increasing, and released 1 minute after cooling started. 4.3 Results and Discussion Structural analysis was performed on all as-fired powders, cold-pressed, hot-pressed and PECS treated pellets. Due to the limitation of apparatus availability, transport data were only collected from hot-pressed samples. 4.3.1 Composition and Structural Characterization Density of bulk samples was determined using Archimedes’ principle and compared to the theoretical density of 5.10 g/cm3 . Both hot-pressing and PECS yielded highly consolidated 29 pellets. The average relative density of hot-pressed samples is 95.9%, which is slightly lower than the value of 98.4% of by PECS treated samples. In comparison, the maximum density reached among pressureless sintered samples was only 65%. Density measurement results were confirmed in SEM images shown in Figure 4.5. XRD and phase analysis All samples were examined by X-ray diffraction. Patterns and phase identification results are shown in below. In all as-fired powder samples (Figure 4.1), delafossite phase was dominant phase. CuAl0.9Mg0.1O2 Intensities (a.u.) CuAl0.925Mg0.075O2 CuAl0.95Mg0.05O2 CuAl0.98Mg0.02O2 CuAl0.99Mg0.01O2 CuAlO2 10 20 30 40 50 2 θ (deg) 60 70 80 Figure 4.1: XRD patterns of as-fired Cu1-x Mgx AlO2 (0% x 10%) powders This result confirmed the reaction steps (reaction 4.1 and 4.2) suggested by Tonooka [57]: 30 spinel-type was initially formed as an intermediate before delafossite phase was achieved. CuO + Al2 O3 −→ CuAl2 O4 CuO + CuAl2 O4 −→ 2 CuAlO2 + (4.1) 1 O 2 2 1 Cu2+ + Ox −→ Cu1+ + h· + O2 O 2 (4.2) (4.3) Following the Kr¨ger-Vink notation, expression 4.3 shows the charge state changes in o this two-step reaction. MgO + Al2 O3 −→ MgAl2 O4 (4.4) 1 O 2 2 (4.5) MgO + 2 CuAlO2 −→ MgAl2 O4 + Cu2 O (4.6) CuO −→ Cu2 O + However, the amount of secondary phases, Cu2 O and spinel-type CuAl2 O4 , increased as Mg doping level rose to above 7.5%. As MgO can also react with Al2 O3 , it competed with CuO and formed spinel phase compound MgAl2 O4 , following either reaction 4.4 and 4.5 or 4.6. In addition, the peaks of Cu2 O may come from the decomposition of residual CuO in argon environment due to the low partial pressure (reaction 4.6). Since cold-press treatment occurred under the same conditions as powder calcination, their XRD patterns matched those of the corresponding precursor powders well, indicating that the composition remained unchanged. Conversely, the relative intensity of secondary phases notably increased after hot-pressing in air, especially for heavily doped samples. The phase change can be viewed as the reverse process of reaction 4.2 due to exposure to oxygen at elevated temperature. Unfortunately, 31 CuAl0.9Mg0.1O2 Intensities (a.u.) CuAl0.925Mg0.075O2 CuAl0.95Mg0.05O2 CuAl0.98Mg0.02O2 CuAl0.99Mg0.01O2 CuAlO2 10 20 30 40 50 2 θ (deg) 60 70 80 Figure 4.2: XRD patterns of cold-pressed Cu1-x Mgx AlO2 (0% x 10%) the near coincidence of the lattice constants of iso-structural MgAl2 O4 and CuAl2 O4 made it difficult to determine the exact phase of spinel that exists in the samples. We can also expect the heavily doped hot-pressed samples to have poor electrical conductivity because spinel phases are highly electrically insulating. PECS pressed pellets preserved and even improved the phase purity of the original powder samples. Even in the 10% Mg doped sample, only a small amount of secondary phases was detected. This can be attributed to the argon environment and higher temperature, which is preferred for the formation of delafossite phase. 32 CuAl0.9Mg0.1O2 Intensities (a.u.) CuAl0.925Mg0.075O2 CuAl0.95Mg0.05O2 CuAl0.98Mg0.02O2 CuAl0.99Mg0.01O2 CuAlO2 10 20 30 40 50 2 θ (deg) 60 70 80 Figure 4.3: XRD patterns of hot-pressed Cu1-x Mgx AlO2 (0% x 10%) Microstructure analysis Scanning electronic microscopy images of polished surfaces from hot-pressed and PECSsintered pure CuAlO2 , CuAl0.98 Mg0.02 O2 and CuAl0.925 Mg0.075 O2 are shown in Figure 4.5. In hot-pressed and PECS treated samples, grains are closely interconnected, indicating very low porosity. The contrast in color produced in gentle-beam mode reflects the difference of average molecular weight in those areas, indicating phase separation. As the randomly scattered insulating spinel phase in Figure 4.5(B) started to form interconnected network in Figure 4.5(C), electrical conductivity dropped dramatically due to the structural change. In contrast, phase uniformity was maintained in PECS-treated samples, which is consistent with the results from x-ray diffraction analysis. 33 CuAl0.9Mg0.1O2 Intensities (a.u.) CuAl0.925Mg0.075O2 CuAl0.95Mg0.05O2 CuAl0.98Mg0.02O2 CuAl0.99Mg0.01O2 CuAlO2 10 20 30 40 50 2 θ (deg) 60 70 80 Figure 4.4: XRD patterns of PECS treated Cu1-x Mgx AlO2 (0% x 10%) 4.3.2 Transport Property Measurement High temperature electrical and thermal property measurements were performed on hotpressed samples. Figure 4.6 shows the electrical resistivity. The inverse proportionality between ρ and T, and the positive value of S indicate that all samples are p-type semiconductors. The electrical resistivity first decreased as Mg content rose and then increased after the secondary phases became significant. at 450 K, the reduction is about 60%, from 6.6 Ω·cm to 2.8 Ω·cm. The difference narrowed as the temperature increased, indicating this is the doping effect. In Figure 4.7, Seebeck coefficient displayed a similar trend. Power factor was calculated from ρ and S ; The 1% and 2% doped samples have larger power factor than undoped CuAlO2 , while 5% doped one was lower due to poor electrical conductivity. The 7.5% and 10% doped 34 Figure 4.5: SEM images (gentle-beam mode) of hot-pressed CuAlO2 (A), hot-pressed CuAl0.98 Mg0.02 O2 (B), hot-pressed CuAl0.925 Mg0.075 O2 (C), PECS-sintered CuAlO2 (D), PECS-sintered CuAl0.98 Mg0.02 O2 (E) and PECS-sintered CuAl0.925 Mg0.075 O2 (F). 35 7 CuAl0.95Mg0.05O2 6 CuAl0.98Mg0.02O2 ρ (Ω ⋅ cm) 5 CuAl0.99Mg0.01O2 4 CuAlO2 3 2 1 0 400 450 500 550 600 650 700 750 Temperature (K) Figure 4.6: Electrical resistivity of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) samples could not be tested due to high electrical resistivity. Thermal conductivity and ZT of some of the hot-pressed samples were plotted in Figure 4.10. At all temperatures, thermal conductivity decreased as Mg content went up. Figureof-merit of all samples increased with temperature. 2% Mg doped sample has the largest ZT value at all temperature, followed by 1% doped and pure CuAlO2 . The 5% doped sample has a worse performance due to the existence of secondary phases and poor electrical conductivity. It can be expected that Mg doping can improve the thermoelectric performance of delafossite-type CuAlO2 as long as sintering conditions are controlled to minimize the formation of secondary phases. 36 800 CuAl0.95Mg0.05O2 CuAl0.98Mg0.02O2 S (μV • K-1) 700 CuAl0.99Mg0.01O2 CuAlO2 600 500 400 450 500 550 600 650 700 750 Temperature (K) Figure 4.7: Seebeck coefficient of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) 4.4 Summary and Future Work In this work, CuAlO2 was doped with Mg to substitute for the Al to improve its electrical conductivity and reduce its thermal conductivity. Powder samples were prepared using ball-milling and solid-state reaction. Cold-pressing, hot-pressing and PECS were used to successfully fabricate bulk samples. X-ray diffraction and SEM results shows that inert gas environment is preferred for pure delafossite phase formation. High temperature transport properties were measured, which reveals that Mg doping can increase power factor and reduce thermal conductivity. The formation of competing phases, primarily spinel phase, greatly reduced the electrical conductivity. 37 Power Factor (10-5 W m-1 K-2) 10 CuAl0.95Mg0.05O2 CuAl0.98Mg0.02O2 8 CuAl0.99Mg0.01O2 6 CuAlO2 4 2 0 400 450 500 550 600 650 700 750 Temperature (K) Figure 4.8: Power factor of of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) 0.15 CuAl0.99Mg0.01O2 CuAl0.95Mg0.05O2 0.10 CuAl0.98Mg0.02O2 CuAl0.925Mg0.075O2 α (cm2 • s-1) CuAl0.9Mg0.1O2 CuAlO2 0.05 0.00 300 400 500 600 700 Temperature (K) Figure 4.9: Thermal diffusivity of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) 38 0.6 CuAl0.98Mg0.02O2 0.5 κ (W ⋅ cm-1 ⋅ K-1) CuAl0.9Mg0.1O2 CuAl0.925Mg0.075O2 CuAl0.99Mg0.01O2 0.4 CuAl0.95Mg0.05O2 CuAlO2 0.3 0.2 0.1 0.0 300 400 500 600 700 Temperature (K) Figure 4.10: Thermal conductivity of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) 0.006 CuAl0.95Mg0.05O2 0.005 CuAl0.98Mg0.02O2 ZT 0.004 CuAl0.99Mg0.01O2 0.003 CuAlO2 0.002 0.001 0.000 400 450 500 550 600 650 700 750 Temperature (K) Figure 4.11: ZT of hot-pressed Cu1-x Mgx AlO2 (0% x 5%) 39 Chapter 5 Sodium Cobalt Oxide Nax CoO2 has long been considered as a competitive candidate for thermoelectric applications due to its misfit structure. In this chapter, we took different approaches to investigate this material system, expand its field of applications and better understand its thermoelectric properties. Solid-state reaction, wet-chemical and electrochemical techniques were used to facilitate this work. 5.1 Background and Motivation Sodium cobalt oxide (Nax CoO2 ) is an exceptionally versatile materials system that display interesting physical properties, due to its special hybrid crystal structure involving both coordinated and disordered nanoblocks. NaCo2 O4 was firstly synthesized in the 1970s [58]. It was then investigated for electrodes in Na batteries [59]. Superconductivity was also discovered near 4.5 K in Na0.35 CoO2 ·1.3H2 O [60]. It even has insulator phases [9]. The basic frame of Nax CoO2 is constructed of tilted CoO6 octahedra sheets, with charge balancing sodium ions randomly distributed between the layers, as shown in Figure 5.1. The 40 the-art thermoelectric material Bi2 Te3 [2]. Fig. 2(b) shows the magnetic susceptibility w and the specific heat C of a polycrystalline sample of NaCo2 O4 [7,9]. The susceptibility is relatively large Figure 5.1: Crystal structure of Nax CoO2 [8] Fig. 1. Crystal structure of NaCo2 O4 : evaluated by the va approaches 35–50 m orders of magnitud conventional metals. clearly indicate that t the effective mass) NaCo2 O4 : Singh [11] calcula NaCo2 O4 ; and pred According to his calc composed of Co 3d spread along the ou large Fermi surface a1g þ eg bands spread make small hole p density of states of th concentration of sodium ions determines not only the lattice spacing between layers, but also the charge state of Co (Co3+ and Co4+ ). Due to the weak Van der Waals type bonding between Na+ and CoO2 , sodium can be easily inserted or extracted from the structure and a series of compounds with various sodium concentration can be produced. Depending on the stacking manner of CoO6 layers and sodium concentration x, these compounds were classified into four major phases [61], as shown in Figure 5.2. The γ-Nax CoO2 (0.55 x 0.74) with hexagonal structure contains two layers in one unit cell. Three-layered phases include α-Nax CoO2 (0.9 x 1.0) with rhombohedral structure, α -Nax CoO2 (x=1.0) with monoclinic structure and β-Nax CoO2 (0.55 x 0.6) with orthorhombic structure. The electrical charge state in the CoO6 layer is controlled by the sodium concentration. Transport properties show strong dependence on the sensitive crystal structure change in the compound. Therefore these four thermodynamically stable phases render distinct structural and electronic properties. Starting from late 1990s, Nax CoO2 has been considered as a promising TE candidate due to its large Seebeck coefficient and high electrical conductivity. In most cases, compounds that display metallic conduction behavior usually render poor thermopower. How41 60 Temperature  (K) 50 Paramagnetic metal 40 Curie-Weiss metal Charge oerdered insulator 30 20 10 Magnetic Order H2O intercalated Superconductor 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Na  Content  x 0.7 0.8 0.9 1 Figure 5.2: Phase diagram of Nax CoO2 ; reproduced from [9] ever, Na0.5 CoO2 seemed to violate this trend by showing low resistivity and large Seebeck coefficient. Although an explicit explanation remains unclear, a combined effect of effective mass enhancement and electron entropy change is speculated to simultaneously contribute to this phenomenon. Sodium-rich (0.740.74) samples, we attempted to synthesize polycrystalline powders with high sodium concentration. Starting with the traditional solidstate reaction, we adopted wet-chemical intercalation techniques to successfully increase sodium content in powder samples from x=0.74 to x=1.0. The results were verified by both ICP analysis and transport properties. We also applied electrochemical intercalation to serve the same purpose. Accurate sodium concentration change was achieve by controlling the discharge current and voltage in a modified T-cell. ICP and XRD confirmed successful sodium insertion from Na0.74 CoO2 to Na0.76 CoO2 . These results were in good agreement with the starting and finishing voltages during discharging. Based on these results, we showed the feasibility and proposed a setup of using the electrochemical technique to realize in-situ tracking of Seebeck coefficient during the intercalation process. Last but not least, we developed a novel sol-gel synthesis method to prepare pure and rare-earth element doped Ca3 Co4 O9 , which is more efficient than solid-state reactions and more environment-friendly than wet-chemical methods involving nitric acid. Using agarose as a template, the water solutions consisting of Co(Ac)2 and Ca(Ac)2 were made into clear gels. After drying, pre-calcination and calcination, phase pure powder samples can be obtained at lower firing temperature than that of SSR. More importantly, partially Yb doped samples were successfully made, which was not realized in SSR involving Yb2 O3 . As-fired powders were consolidated into bulk pellets using a hot-press, which caused phase change, probably due to temperature fluctuation and inert gas environment. Additional air-annealing restored the desire composition. Even though great progress has been made in the development of these new yet promising 70 candidates, some major issues should be addressed in future study. First, the performance of n-type materials needs improvement. The ZT of state-of-the-art n-type materials only shows about half the value of their p-type counterparts. New materials with comparable performance are in great demand. Second, theoretical calculation is needed for complex oxides. The electrical conduction mechanism of these strong correlated systems cannot be fully explained by classic semiconductor theories. Deeper understanding would assist the discover and design of better materials. Lastly, problems encountered in devices fabrications are also waiting for improved solutions, such as large contact resistance and thermal expansion mismatch between oxide legs and substrates. 71 APPENDICES 72 Appendix A Iron-Vanadium-Aluminum Ternary metallic alloy Fe2 VAl with a pseudogap in its energy band structure has received intensive scrutiny for potential thermoelectric applications. Due to the sharp change in the density of states profile near the Fermi level, interesting transport properties can be triggered to render possible enhancement in the overall thermoelectric performance. Previously, this full-Heusler type alloy was partially doped with cobalt at the iron sites to produce a series of compounds with n-type conductivity. Their thermoelectric properties in the temperature range of 300 K to 850 K were reported. In this research, efforts were made to extend the investigation on (Fe(1-x) Cox )2 VAl to the low-temperature range. Alloy samples were prepared by arc-melting and annealing. Seebeck coefficient, electrical resistivity, and thermal conductivity measurements were performed from 80 K to room temperature. The effects of cobalt doping on the electronic and thermal properties are discussed. 73 A.1 Background and Motivation Iron-vanadium-aluminum (Fe2 VAl) has been recognized as a potential thermoelectric (TE) material with large power factor [75]. This compound displays a sharp change in the density of states near the Fermi energy level, which is believed to give rise to its large Seebeck coefficient. It has been shown that such a deep pseudogap in the electronic band structure is induced by the hybridization between the aluminum’s s and p states and transition-metal’s d orbitals. Doping has been widely used as an effective approach to fine tune the band structures of semiconductors and semimetals. As holes and electrons simultaneously contribute to the total conductivity in semimetals according to calculation results [4], both n-type and p-type doping have been demonstrated to successfully reduce electrical resistivity and promote thermopower in this system. Doping using Sn, Si, and Ge at the Al site has been reported to greatly enhance the power factor [76] [77]. Ti and Mo were also used to substitute for V atoms, which resulted in improved low-temperature ZT [78] [79]. Thermoelectric properties of (Fe1-x Cox )2 VAl in the high-temperature range have been reported by other research groups [80]. Herein, we present electrical and thermal transport measurement results of (Fe1-x Cox )2 VAl in the low-temperature range (80 K to 300 K), in order to better understand the fundamental physical properties of this compound. A.2 Experimental Details Due to the high melting point of vanadium and iron, samples were prepared using an arcmelting technique. High-purity elements were weighed according to desired stoichiometry, 74 placed on a water-cooled copper crucible under owing argon, and melted with current-induced electric arc. To achieve homogeneity, melted chunks were flipped over and remelted for three times, followed by additional annealing. As-cast ingots were wrapped with graphite foil, sealed in evacuated quartz tubes, and then soaked at 900 ◦ C for 48 h. Due to its relatively low melting point of, aluminum is likely to vaporize during the melting process, which is considered to be the main reason for material loss. As was suggested by Mizutani et al., even slight deviation from stoichiometry in the compound can lead to a dramatic change in transport properties and thermoelectric performance [81]. Therefore, additional Al was carefully and accordingly added between each remelting step to compensate the loss and ensure stoichiometric composition [82]. Figure A.1: High voltage electric arc-melter For phase identification, samples were ball-milled into fine powders and scanned by pow75 der X-ray diffraction (XRD, Rigaku MiniFlex II). A rectangular bar was cut out of each sample using a spark wire cutter to perform transport property measurement. Electrical conductivity (σ) and Seebeck coefficient (S) were obtained from 80 to 300 K in a steady state cryostat system cooled by liquid nitrogen. Thermal conductivity (κ = κe + κl ) was measured simultaneously in the same apparatus. A.3 A.3.1 Results and Discussion Composition and Structural Characterization XRD and phase analysis The fluorescence effect of cobalt produces strong background noise. To enhance the signalto-noise ratio in XRD patterns, slow scanning speed (0.1 ◦ min) was adopted to minimize this effect. As shown in Figure A.2 (left), all sample patterns matched the reference data of the full-Heusler structure without detectable secondary phases, suggesting that Fe was successfully substituted by Co. On closer inspection of one high-angle peak near 81◦ in Figure A.2 (right), a slight yet systematical shift towards lower angle can be observed, indicating monotonically expanded lattice due to the size difference between Fe and Co atoms. A.3.2 Transport Property Measurement Electrical Transport Properties Seebeck coefficient of the stoichiometric sample is positive and exhibits weak yet positive dependence of temperature over the range of measurement, consistent with previous reports [83]. Even with small amount of Co substitution, S immediately changes sign as 76 Intensities (a.u.) (Fe0.6Co0.4)2VAl (Fe0.8Co0.2)2VAl (Fe0.9Co0.1)2VAl (Fe0.95Co0.05)2VAl 20 40 60 80 81 82 2 θ (deg) Figure A.2: XRD patterns of (Fe1-x Cox )2 VAl (5% x 40%) shown in Figure A.3. This transition reflects the sudden increase in the concentration of negative carriers due to doping. For all doped samples, the absolute value of Seebeck coefficient (|S|) still grows with temperature in the range of measurement. At each temperature point, interestingly, |S| first increases with doping level x up to 10% and then declined. Heavily doped samples (x > 20%) exhibit even smaller |S| than the pure sample. As was indicated in the formula of Seebeck coefficient in two-carrier systems [84], the enhancement in thermopower is due to the optimized carrier density in the 10% Co doped sample. Going beyond that doping concentration, Seebeck coefficient maintained a small magnitude associated with the metal-like conduction due to large electron concentration. A maximum value, S= -97.89 µV/K, was obtained in the 10% doped sample at 300 K. 77 100 S (μV ⋅ K-1) 50 (Fe0.6Co0.4)2VAl (Fe0.8Co0.2)2VAl 0 (Fe0.9Co0.1)2VAl (Fe0.95Co0.05)2VAl -50 -100 100 150 200 250 300 Temperature (K) Figure A.3: Seebeck coefficient of (Fe1-x Cox )2 VAl (5% x 40%) The electrical resistivity (ρ = 1/σ) in pure Fe2 VAl sample displays semiconductor-like behavior, which modestly decreases with the increasing temperature. As each Co atom provides one extra electron when substituting Fe, ρ is significantly suppressed by over 50% after additional electrical carriers are introduced into the system: the higher the doping level is, the lower the resistivity. In addition, Co substitution converted the conduction behavior into metallic-type, as shown by the positive temperature coefficient of resistivity. This phenomenon can be explained by the gradual transition from a two-carrier carrier system to a single carrier system dominated by electrons. Power factor (S 2 /ρ) represents the electrical contribution to the figure-of-merit. The power factors of all samples, including pure Fe2 VAl, are illustrated in Figure A.5. A maximum value of 26 µW/cmK2 is obtained in the 10% Co doped sample at 300 K, due to its 78 0.0005 ρ (Ω ⋅ cm) (Fe0.6Co0.4)2VAl 0.0004 (Fe0.8Co0.2)2VAl (Fe0.9Co0.1)2VAl 0.0003 (Fe0.95Co0.05)2VAl 0.0002 0.0001 100 150 200 250 300 Temperature (K) Figure A.4: Electrical resistivity of (Fe1-x Cox )2 VAl (5% x 40%) large Seebeck coefficient and low electrical resistivity. Doping greatly increases the electron concentration n, which reduced the electrical resistivity. S initially increased as the compensating effect and then reduced when the electron concentration exceeded the optimal range. Thus, an optimized point is achieved when the product of these two factors reach its maximum at x = 10%. Considering the fact that the power factor curve is still ascending, optimized performance may be obtained at a higher temperature. Thermal Conductivity Total thermal conductivities (κ = κe + κl ) in pure and doped samples are plotted in Figure A.6. With increasing cobalt content, κ is monotonically reduced because Co atoms serve as point defects to scatter phonons. In the 40% doped sample, the reduction is over 50% through the entire range of measurement. Electronic and lattice contribution is separated 79 Power Factor (10-6 W m-1 K-2) 30 (Fe0.6Co0.4)2VAl (Fe0.8Co0.2)2VAl 20 (Fe0.9Co0.1)2VAl (Fe0.95Co0.05)2VAl 10 0 100 150 200 250 300 Temperature (K) Figure A.5: Power factor of (Fe1-x Cox )2 VAl (5% x 40%) following the Wiedemann-Franz law (κe = L0 σT ), where L0 is the Lorentz number. As shown in Figure A.7, κe significantly increase with doping, due to the increase in extrinsic electron concentration. κl displays the opposite trend because the mass difference between Fe and Co leads to an augmentation in lattice disorder. Since the κl is approximately one order of magnitude higher than κe , the total thermal conductivity still significantly decreases. Despite of the considerable reduction, the total thermal conductivity is still approximately one magnitude higher than those of the skutterudite and Bi2 Te3 based materials, which is due to the low molecular weight of atomic species and relatively simple crystal structure. Dimensionless Figure-of-merit, ZT Figure-of-merit (ZT ) of (Fe1-x Cox )2 VAl is computed and plotted in Figure A.8. For all samples, ZT increases with temperature in the range of measurement. The highest value 80 0.4 (Fe0.9Co0.1)2VAl (Fe0.8Co0.2)2VAl κ (W ⋅ cm-1 ⋅ K-1) (Fe0.6Co0.4)2VAl (Fe0.95Co0.05)2VAl 0.3 0.2 100 150 200 250 300 Temperature (K) Figure A.6: Total thermal conductivity of (Fe1-x Cox )2 VAl (5% x 40%) of 0.034 is obtained in the 10% doped sample at 300 K. Although Co doping has doubled the performance of the stoichiometric compounds, the efficiency of this material is still much lower than contemporary candidates, mainly due to its high thermal conductivity. Further reduction of thermal conductivity would be an viable method for additional ZT enhancement. Using heavier atoms to form solid solution may further lower the lattice thermal conductivity. Powder processing and advanced sintering techniques will also be adopted to create fine microstructure to serve the same purpose [85] [86]. A.4 Summary In this research, partially cobalt doped Heusler alloy (Fe1-x Cox )2 VAl was prepared with an arc-melting technique. Single-phase samples were confirmed by XRD results in all samples. 81 0.03 (Fe0.6Co0.4)2VAl κe (W ⋅ cm-1 ⋅ K-1) (Fe0.8Co0.2)2VAl (Fe0.9Co0.1)2VAl 0.02 (Fe0.95Co0.05)2VAl 0.01 100 150 200 250 300 Temperature (K) Figure A.7: Electronic thermal conductivity of (Fe1-x Cox )2 VAl (5% x 40%) Excessive electrons introduced by n-type doping not only significantly reduced electrical resistivity and increased Seebeck coefficient, but also succeed in reducing thermal conductivity. In spite of the large power factor in this compound, large thermal conductivity prevents ZT values for practical applications. Future investigation would focus on thermal conductivity reduction though isovalent substitution with heavy atoms and powder processing to create fine microstructure. 82 0.04 (Fe0.6Co0.4)2VAl ZT 0.03 0.02 (Fe0.8Co0.2)2VAl (Fe0.9Co0.1)2VAl (Fe0.95Co0.05)2VAl 0.01 0.00 100 150 200 250 Temperature (K) Figure A.8: ZT of of (Fe1-x Cox )2 VAl (5% x 40%) 83 300 BIBLIOGRAPHY 84 BIBLIOGRAPHY [1] V. 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