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2004 p
775‘6’2‘79

This is to certify that the
thesis entitled

A MODIFIED “SHIFT-AND-RATIO” METHOD FOR
EXTRACTION OF THE EFFECTIVE CHANNEL LENGTH OF
DEVICES CONTAINING HALO-IMPLANTS

presented by

Jorge Walter Argandofia

has been accepted towards fulfillment
of the requirements for the

MS. degree in Electrical and Computer
Engineering

 

Major Professor's Signature

dam 16; 200“!

Date

MSU is an Affirmative Action/Equal Opportunity Institution

 

 

 

 

 

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DATE DUE DATE DUE DATE DUE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6/01 c-JCIRC/Datoouepss-sz

 

AMl

A MODIFIED “SHIFT-AND-RATIO" METHOD FOR EXTRACTION OF THE
EFFECTIVE CHANNEL LENGTH OF DEVICES CONTAINING
HALO-IMPLANTS
BY

Jorge Walter Argandofia

A THESIS

Submitted to
Michigan State University
in partial fulfillment of the requirements
for the degree of

MASTER OF SCIENCE
Department of Electrical and Computer Engineering

2004

 

 

 

AM(

T
length 0
This is c
efiecfive
the case
method
Of a dev

the stan

ABSTRACT
A MODIFIED “SHIFT-AND-RATIO” METHOD FOR EXTRACTION OF THE
EFFECTIVE CHANNEL LENGTH OF DEVICES CONTAINING
HALO-IMPLANTS
By

Jorge Walter Argandofia

The standard shift and ratio method for extracting the effective channel
length of a device does not work properly with devices containing halo-implants.
This is due to the fact that this standard method makes the assumption that the
effective mobility is not dependent on the channel length of a device, which is not
the case for devices containing halo-implants. The modified shift and ratio
method proposed takes the effective mobility dependence on the channel length
of a device into account, and shows potential for solving the issues that exist with

the standard shift and ratio method for devices containing halo-implants.

ACKNOWLEDGEMENTS

I would like to take this opportunity to thank everyone that aided in the
success of this study. First and foremost Dr. Donnie Reinhard is thanked for
aiding me with all the work regarding this research. His immeasurable kindness
and patience throughout the entire duration of the project helped make my
graduate experience a truly enjoyable one. IBM and Mary Weybright are
thanked for providing the wafers with test devices, without which none of this
would have been possible, as well as providing us with information regarding the
devices and spending the time to review our measurement characteristics.
Thanks are also due to Dr. Timothy Hogan and Dr. Timothy Grotjohn for giving
their time to be members of my committee and giving their personal thoughts on
the research. Special thanks are extended to my family and friends for all their

help and support.

iii

TABLE OF CONTENTS

LIST OF TABLES ......................................................................................................... vi
LIST OF FIGURES ....................................................................................................... vii
KEY TO SYMBOLS ..................................................................................................... ix
CHAPTER 1 ................................................................................................................... 1
INTRODUCTION .......................................................................................................... 1
1.1 Problem Statement ........................................................................................... l
1.2 Thesis Layout .................................................................................................. 2
CHAPTER 2 ................................................................................................................... 4
BACKGROUND ............................................................................................................ 4
2. 1 Introduction ..................................................................................................... 4
2.2 Extracting the Effective Channel Length .......................................................... 4
2.3 The Standard Shift and Ratio Method .............................................................. 6
2.4 Modified Shift and Ratio Method ................................................................... 11
2.5 SPICE Models ............................................................................................... 13
CHAPTER 3 ................................................................................................................. 14
EXPERIMENTAL METHODS ..................................................................................... 14
3. 1 Introduction ................................................................................................... 14
3.2 Devices .......................................................................................................... 14
3.3 Measurement System ..................................................................................... 19
3.3.1 Overview ............................................................................................... 19
3.3.2 Probes and Probing Station .................................................................... 20
3.3.3 HP-4145B Semiconductor Parameter Analyzer ...................................... 22
3.3.4 HPIB Card and Program ......................................................................... 25

3.4 Data Manipulation ......................................................................................... 26
CHAPTER 4 ................................................................................................................. 28
SHIFT AND RATIO RESULTS ................................................................................... 28
4. 1 Introduction ................................................................................................... 28
4.2 Non-Halo Devices ......................................................................................... 28
4.3 Halo Devices ................................................................................................. 32
CHAPTER 5 ................................................................................................................. 39
SPICE MODELING ...................................................................................................... 39
5.1 Introduction ................................................................................................... 39
5.2 Level 2 Models of Non-Halo Devices ............................................................ 39
5.3 BSIM3 Modeling ........................................................................................... 52

iv

CHAPTER 6 ................................................................................................................. 54

CONCLUSION ............................................................................................................. 54
6. 1 Introduction ................................................................................................... 54
6.2 Summary of Results ....................................................................................... 54
6.3 Future Research ............................................................................................. 54

APPENDIX A ............................................................................................................... 58

GWBASIC PROGRAM ................................................................................................ 58

APPENDIX B ............................................................................................................... 65

PROGRAM DETAILS .................................................................................................. 65

APPENDIX C ............................................................................................................... 74

MEASUREMENT DATA ............................................................................................. 74

APPENDIX D ............................................................................................................... 90

DATA MANIPULATION IN EXCEL .......................................................................... 9O

BIBLIOGRAPHY ......................................................................................................... 93

LIST OF TABLES

Table l. Excerpt of I—V data used when applying the shift and ratio method ................. 29
Table 2. Shift and Ratio Data for Non-Halo Devices ..................................................... 74
Table 3. Shift and Ratio Data for Halo Devices with L=O.42um and L=8.4p.m .............. 79
Table 4. Shift and Ratio Data for Halo Devices with L=O.21p.m and L=8.4um .............. 84

vi

LIST OF FIGURES

Figure 1. Various channel length parameters [3] .............................................................. 5
Figure 2. Effective channel length vs. mask length for nMOSFET’s [3] .......................... 9
Figure 3. nMOS device with halo implants [6] .............................................................. 10
Figure 4. Picture of wafer provided by IBM .................................................................. 15
Figure 5. 2-Termina1 setup used to obtain I-V measurements ......................................... 16
Figure 6. Plot of Id vs. Vd = Vg using data from setup in Figure 5 ................................ 17
Figure 7. 3-Terminal setup used to obtain I-V data ........................................................ 17
Figure 8. Plot of Id vs. Vd using data from setup in Figure 7 ......................................... 18
Figure 9. Block diagram of equipment setup ................................................................. 20
Figure 10. A picture of the probing station used for I-V measurements .......................... 21
Figure 11. A close-up picture of the probed wafer ......................................................... 22
Figure 12. The HP-414SB Semiconductor Parameter Analyzer ...................................... 23
Figure 13. HP-4145B Source/Monitor Unit Simplified Circuit Diagram [7] .................. 24
Figure 14. Semi-log plot of S-function vs. Vg with Vd = 0.05V .................................... 29
Figure 15. Ratio plot for various 6 ‘shift’ values ............................................................ 31
Figure 16. Semi-log plot of S-function vs. Vg with Vd=0.05V ...................................... 33
Figure 17. Ratio plot for various 6 ‘shift’ values ............................................................ 34
Figure 18. Semi-log plot of S-function vs. Vg with Vd = 0.05V .................................... 35
Figure 19. Ratio plot for various 6 ‘shift’ values ............................................................ 36
Figure 20. Id vs. Vd = Vg for non-halo device, L = 8.4um ........................................... 41
Figure 21. Simulated and measured data using Figure 5 setup ....................................... 43

vii

Figure 22. Simulated and measured data using Figure 5 setup ....................................... 44

Figure 23. Simulated and measured data using Figure 7 setup ....................................... 45
Figure 24. Id vs. Vd = Vg for non-halo device, L = 0.21pm .......................................... 47
Figure 25. Simulated and measured data using Figure 5 setup ....................................... 48
Figure 26. Id vs. Vd = Vg for halo device, L = 8.4um ...................................................... 49
Figure 27. Id vs. Vd = V8 for halo device, L = 0.42um .................................................... 50
Figure 28. Id vs. Vd = Vg for halo device, L = 0.2mm .................................................... 51
Figure 29. Threshold voltage vs. channel length for various devices [10] ...................... 52

viii

I-eff
I-mask
I-gate

l-met

AL

8ox
8S
tox

KEY TO SYMBOLS

Effective channel length

Mask length

Gate length

Metallurgical length

Delta L

Drain-to-source current

Drain-to-source voltage

Effective mobility

Oxide Capacitance

Width

Oxide dielectric

Semiconductor dielectric

Oxide thickness

Gate voltage, Gate-to-Source voltage

Threshold voltage

ix

de
Rtot
Rch
S(Vg)
r(6,Vg)
C
MOSFET
nMOS
D

G

S

SB

SMU

VFB

NA

Source drain resistance

Total resistance

Channel Resistance

S function

Ratio

Mobility change

Metal Oxide Semiconductor Field Effect Transistor

N-channel Metal Oxide Semiconductor

Drain

Gate

Source

Substrate

Source/Monitor Unit

Channel length modulation

Flat Band voltage

Boltzmann’s constant

Acceptor concentration

¢F

ni

Vbs

HPIB

Temperature

Fermi potential

Intrinsic carrier concentration

Bulk-to-source voltage

Charge of an electron

Hewlett Packard Interface Board

xi

CHAPTER 1

INTRODUCTION

1.1 Problem Statement

Various methods exist to determine the effective channel length of a
MOSFET. The effective channel length of a device is of importance to industry
for monitoring and modeling purposes. However, with technology changing,
current methods can no longer properly extract the effective channel length for
certain MOSFET types. Thus new methods are needed in order to determine the
effective channel length of these newer devices. The new proposed method
described in this paper will be of a modified version of the standard “shift and
ratio” method, which is a method that is commonly used due to its accuracy and
consistency for extracting the effective channel length. However, this is not the
case for devices that contain halo implants. The effective mobility in devices that
contain halo implants is different between short and long channel length devices,
a difference that normally does not exist when dealing with typical devices. This
difference in effective mobility seems to be the main predicament for the shift and
ratio method. The proposed shift and ratio method takes this difference into

account.

1.2 Thesis Layout

A brief background is given on the importance of extracting the effective
channel length. The shift and ratio method is described as well as the proposed
modified shift and ratio method. The shift and ratio method is thoroughly
described with a series of equations that are used in the extraction of the
effective channel length. Similarly, the proposed modified shift and ratio method
is described with the same set of equations, but taking into account the effects of
halo implants, particularly in that the effective mobility is dependent on the
channel length of a device. The importance of the extracted effective channel
length for modeling purposes is also noted.

The types of devices as well as the various setups used to obtain l-V
measurements are also described. All the main components and their respective
roles to obtain measurements are also described in detail.

The results for both the non-halo as well as the halo devices are
discussed. The shift and ratio method is first applied to the non-halo devices.
The manipulated data is plotted to clearly show how the values needed to apply
the shift and ratio method are obtained. For the halo implants we once again
apply the shift and ratio method and observe the unphysical results as described
by van Meer [1]. The proposed modified shift and ratio method is then applied to
these halo devices. The results that are obtained are analyzed and discussed.

The modeling work done on the devices is described in detail. The
methods used for extraction of parameters for the SPICE models are described.

The inability to properly model the short channel length devices using level 2

parameters is discussed, as well as the need of higher-level models.

The GWBASIC program used to efficiently obtain l-V measurements is
included in Appendix A. Appendix B describes the program coding in detail, such
that (if necessary) changes can be made to accommodate other measurements.
All the data used for applying the shift and ratio method as well as the modified
shift and ratio method is attached in Appendix C. Finally an explanation of how
all the calculated values are obtained that are used for applying both methods in
the extraction of the effective channel lengths are in Appendix D. Also included

are the specific equations used in the Excel files to calculate the values needed.

CHAPTER 2

BACKGROUND

2.1 Introduction
This chapter provides an overview of material important to this thesis.

Section 2.2 notes the importance of knowing Leff, specifically for short channel

devices where a small inexactness can make a significant difference in
performance. Section 2.3 explains the standard shift and ratio method, which is
widely used and considered one of the most accurate and consistent techniques
for extracting the effective channel length of a device. Section 2.4 explains a
problem that exists with the shift and ratio method when dealing with devices
containing halo implants and also gives details of the proposed modified shift and
ratio method to take care of devices with halo implants. Modeling with SPICE is

discussed in Section 2.5.

2.2 Extracting the Effective Channel Length

By design, physical features of a device are prescribed. However, the
actual value of these features change as the devices are processed. Particularly,
the effective channel length of a MOSFET is a critical parameter. Engineers use

it to monitor lithography and etching during process development and

manufacturing, and designers who model the l-V characteristics of a device need
to know the effective channel length of the device they are modeling. [2]

Various terms exist to describe the length of a device, as can be seen in Figure 1

[3]-

.—
.—
‘—
.—
«—
.—
g—
.__.

 

 

§‘— Lmask -—"§
E‘— Lgate ——'>§
| Gate |
I I<:_°"'d°

 

 

 

 

 

 

Figure 1. Various channel length parameters [3]

Lmask is defined as the design gate length on the etch mask. Through
lithography and etching processes, Lmask is reproduced on to the wafer, and is
defined as Lgate. which may be longer or shorter than Lmask. The distance
between the metallurgical junctions of the source and drain is known as Lmet.
The effective channel length, Leff, isn't strictly a physical parameter and actually

is defined through electrical characteristics of the device. Leff is defined as:

Lefl " Lmask - AL (1)
where Lmask is an initially designed known value, with some changes known as

AL. This AL which is of the order of tens of nanometers, does not really have that
much of an effect with large channel length devices. However, with sub-micron
channel length devices this small AL can significantly affect the manner in which
the device works. Different methods exist in order to “accurately” calculate the
effective channel length of a device. The shift and ratio method has become a
preferred means that is commonly used. It produces accurate estimates of the
effective channel length for traditional devices, but has issues with certain newer
devices. Specifically the shift and ratio method has problems with devices
containing halo implants. A new proposed method based on the shift and ratio

method will also be described for devices containing halo implants.

2.3 The Standard Shift and Ratio Method

The standard shift and ratio method is considered one of the most
accurate techniques to calculate the effective channel length. Similar to many
methods, the shift and ratio method is primarily based on the device current in

the linear region [4].

 

 

W V " Vt - Vd
Ids =#Cox[ L I g 2 S Vds (2)
617

where

Ids is the source drain current.

Vds is the source drain voltage.
W is the width of the device.

Leff is the effective channel length of the device.

it is the effective mobility.

Vt is the threshold voltage of the device.
V9 is the applied gate voltage.

Cox is the gate oxide capacitance per unit area.

As shown by Taur [3], this equation can be modified to include the parasitic

source-drain resistance (de).

 

 

V Le
TQ'Rtot'de'l’Rch‘de‘I Vfijv ‘Vd (3)
ds ”Coxw( g g s)

which can be generalized to the following form which the shift and ratio method is

based on.
Rt0t(Vg) " de + Leff f (Vg ‘ Vt) (4)
where f is a function of the gate overdrive, V9 - V], for all devices. The shift and

ratio method continues by taking the derivative of the above equation (4) with

respect to V9. This is defined as the S-function

 

3(V ).thot-L m (5)
8 avg eff avg

where de and Leff are assumed to be constant with respect to V9.

Using the shift and ratio method requires the use of two devices: one with

a long channel and another with a short channel. It is assumed that both devices

have the same mobility value such that 6f/6Vg is the same for both devices for a

given Vg - Vt. However, the threshold voltage of a short channel device is

normally not equal to the threshold of a long channel device. Therefore, in order

to solve for the effective channel length of both devices, the S-function of the

short channel device is shifted by some 6 along the V9 axis. The ratio between

the two is then taken

. 50(V8) (6)

r(6,Vg) Si(Vg _ a)

where the superscript ‘i’ and ‘0' denotes the short and long channel device

respectively. The quantity 6 is equal to the threshold voltage difference between

the devices (Vto-Vti). The ratio equation (6) then reduces to

 

 

0 0
L _
r= f’fl =- Linask AL (7)
l l
Lefl Lmask - AL

Since the mask length of both devices is known, AL can be solved for. Before AL

can be determined, however, 6 must be found experimentally. This is done by

plotting r(6,Vg) as a function of V9 for various 6 values. The 6 that produces a
constant r is determined to be VtO-Vti.

Thus, AL is determined by “shifting” V9 by a 6 and documenting the “ratio”

of two device S-functions. This method seems to work fine with most types of

devices and the results using this method on typical devices is shown by Taur in

 

 

 

 

 

Figure 2.
Shift and Ratio extracted effective channel length vs. mask length
for NMOSFET's
0.5
0.4 4
A 0.3 «
E
3
I:
3 0.2 .
0.1 4
0 . s . . . . . . .
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
Lmask (um)

 

 

 

Figure 2. Effective channel length vs. mask length for nMOSFET’s [3]

As devices become smaller, halo implants have been included in the
fabrication process in order to improve performance. This causes the effective
mobility to vary with L, which in turn does not allow one to use the shift and ratio
method. One of its primary assumptions is that the effective mobility is the same
for both short and long channel devices.

To improve the performance of deep submicron devices, ion implantation

is commonly used. Ion implantation is the process of introducing dopants into

 

 

the surfaC

[0 MeV er

 

at which tl
implantati
containing

effective n

It Wi
increases I
e”Ough.th
mask IEngt

meth0d)_

 

the surface layer of a solid substrate by bombarding the solid with ions in the keV
to MeV energy range [5]. The penetration of the dopant is dependent on the rate
at which the ion loses its energy. The properties of a device change when ion
implantations are introduced. In our particular case, we are dealing with devices
containing halo implants (Figure 3) and we note the changes it creates in the

effective mobility.

\l/ l l°*‘°° l/
I...) C—"ul

VHalo

p-substrate

 

 

 

 

 

 

 

Figure 3. nMOS device with halo implants [6]

It was shown by van Meer [1] that the extracted effective channel length
increases for devices with halo implants. When the halo implant doping is high
enough, the extracted effective channel length actually becomes greater than the
mask length (i.e. negative AL values are obtained using the shift and ratio

method).

10

2.4 Modified Shift and Ratio Method

The shift and ratio method works well when extracting Leff for most

devices, but has problems when dealing with devices containing halo implants.
In a previous study for example, the method produced negative AL values and it
was concluded that the method produced unphysical results. it is a hypothesis of
this thesis that the problem may be due to an assumption made by this method,
that the effective mobility of the device is the same for both long and short
channel devices, which is not the case for devices with halo implants. Short
channel devices with halo implants have a lower effective mobility due to a higher
vertical electric field and increased impurity scattering. The new proposed
method assumes that the effective mobility of the short channel device is a
percentage (less than 100%) of the effective mobility of the larger device.

”short (Vg " Vt) = Clulong (Vg ‘ Vt) (8)

where ‘C’ is less than 1. Similar to the shift and ratio method, this modified

method also assumes that de is constant with respect to V9. The proposed

method follows a similar series of steps as the shift and ratio method. The 8-

function for the long channel device is:

 

0
0 @222 0 deg-Vt) (9)
5 (v8). =L

dVg elf dVg

while for the short channel device:

 

dRiot _ Leff dflvg ’ Vt! ) (10)

Si(V )-
8
dVg C dVg

11

Note that the ‘C’ term is the previous constant mentioned that relates the
effective mobilities of the long and short channel devices.

As previously done, the ratio between the two devices is taken, where 6
again is equal to the threshold voltage difference between the devices (VtO'Vti).

The ratio equation now reduces to

 

0 0
L L -AL
magi-C mask (11)
l
Leff Lmask-AL

An average constant value of r can be extracted by plotting r vs. V9. The mask

length values are known, but two unknowns exist, C and AL.

Let us consider that C = 0.7 with
0
Lmask T 5w"

Li

= 200nm
mask

ALO =- ALi - SOnm

Then the value of r using equation 11 would be 23.1. If we were to assume C = 1
which is what is done by the shift and ratio method, with the same two devices
previously described, and a measured r value of 23.1, we would calculate AL = -
17nm using equation 7.

The exact percent change in effective mobility between the long and short
channel device is unknown. Thus the proposed method requires measurements
for three devices: one long channel device and two short channel devices with
different L values. One then makes the assumption that both short channel

devices approximately have the same effective mobility. Then for the second

12

short channel device the ratio equation is.

 

0 0
L -
Mei-flask AL (12>
J J _
Lefi Lmask AL

where ‘j’ denotes the other short channel device. Now with two equations and
two unknowns, one can solve for both C and AL. This proposed method would
serve to “more accurately’ estimate the effective channel length of devices

containing halo implants.

2.5 SPICE Models

The channel length is a primary parameter in SPICE models; small
variations in the channel length device can significantly affect its performance,
especially when dealing with short channel devices. When creating large circuit
models, small inaccuracies that exist in a single device can multiply to create
erroneous results. These days with complex devices containing halo implants,
high level (BSIM3) SPICE models are necessary in order to accurately simulate
them. Obtaining an accurate estimate of the effective channel length can be very
useful to engineers creating circuit models. Specific SPICE related issues are

discussed further in Chapter 5.

13

CHAPTER 3

EXPERIMENTAL METHODS

3.1 Introduction

Chapter 3 describes everything related to obtaining and processing the
data needed for this project. Specifically section 3.2 explains the setup of the
equipment and goes further into detail by explaining the role of all the equipment
pertinent to data extraction. Section 3.3 reviews the various methods used when
manipulating data to perform the shift and ratio method as well as the new

modified method.

3.2 Devices

International Business Machines (IBM) provided eight-inch diameter
wafers containing test devices. From these wafers, two particular types of n-
channel silicon MOSFET’s were used for this project, devices containing halo-
implants and other devices that do not contain halo-implants. First
measurements were made on the devices that do not contain the halo-implants,
to demonstrate the basic method described by Taur [3] using the shift and ratio
method with our experimental setup. As mentioned before the shift and ratio

method requires measurements to be made for two devices, a long channel

14

device and a short channel device. The long channel device had gate
dimensions of W = 8.4um and L = 8.41m. The short channel device had gate

dimensions W = 8.4pm and L = 0.21pm. Note the width of both devices is the

same.

 

Figure 4. Picture of wafer provided by IBM

For each device, two types of l-V measurements were made. First l-V

data was obtained using the setup pictured below in Figure 5.

15

 

Figure 5. 2-Terminal setup used to obtain l-V measurements

In this setup, the drain and gate of the device are connected to the same
voltage source and the substrate and source of the device are grounded.
Plotting the drain current vs. the voltage allows one to extract some important
parameters for the SPICE models, which will be further explained in Chapter 5.

Representative data for this device measurement using the setup in Figure 5 is

shown in Figure 6.

16

 

 

'U
H

Id vs. Vd = Vg plot for L = 8.4um
Non-halo device

 

1.20E-04

f

1.005-04 /
8.00E-05 /

6.00E-05 / [+L = 8.40m]
4.00E'05 /

2.00E-05

0.00E+00 ”J . f
0 0.5 1 1.5 2 2.5
Vd = Vg

 

 

 

 

 

 

 

 

 

 

 

Figure 6. Plot of ld vs. Vd = Vg using data from setup in Figure 5

 

 

Figure 7. 3-Terminal setup used to obtain l-V data

Secondly, measurements were made using the following setup. Here the

17

 

source and the substrate are grounded. The gate of the device is connected to a
step function voltage source. The drain of the device is connected to a sweeping
function voltage source. Typically the drain current is plotted vs. the drain
voltage for various gate voltages, providing a family of curves. This setup
provides data that is used for the shift and ratio method, where the drain voltage
is kept small (such that the device stays within the linear region) for various gate
voltages. This data is also to be used for comparison with the created SPICE
models, to observe how well they compare with the actual data from the devices.
Representative data for this device measurement using the setup in Figure 7 is

shown in Figure 8.

 

Id vs Vd for L = 8.4um
Non-halo device

1.205-04
1.00E‘04 /
8.00E-OS
/ - Vg = 0.5V

6.005-05 +Vg = 1.0V

13” -ar-Vg = 1.5V
4.00E-05 Vr
2.005-05

+Vg = 2.0V
0.00E+00

 

 

 

 

 

 

 

Id

 

 

 

AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
...............

 

 

 

 

 

 

o 0.5 1 1.5 2 2.5
Vd

 

 

Figure 8. Plot of Id vs. Vd using data from setup in Figure 7

18

Both of the previous two measurements setups are also used for the
devices containing halo-implants, but l-V measurements were measured for
three devices. Two of them have the same gate dimensions as the devices not
containing halo-implants. The third device has dimensions of W = 8.4um and L =
0.42pm, which is the other short channel device that is assumed to have
approximately the same effective mobility as the device with L = 0.21pm. The
purpose of using three devices is to implement the modified shift and ratio

method describe in Section 2.4

3.3 Measurement System

3.3.1 Overview

The main components of our setup to obtain l-V measurements, is shown
below in Figure 9, in the form of a simplified block diagram. A brief summary of
the main components and their respective roles is also discussed. The probes
along with the shielded probing station provide protection for the data from
outside noise. The HP-414SB is the equipment used to make the I-V
measurements. The HPIB card and computer program are used to control the
HP-414SB remotely, as well as simplify the setup procedure, and allow for

efficient collection of the data.

19

     
   

 

Computer with
HPIB card

HP 108336 Cable

 

 

     
   
   
  
  

HP-4145B
Semiconductor
Parameter

Analyzer

Shielded Coaxial
Cables for each —>
SMU channel

    

Probe station
with probes

 

Figure 9. Block diagram of equipment setup

3.3.2 Probes and Probing Station

The wafer used to obtain l-V measurements was placed within a shielded
probing station. The Signatone 8-1160 High Frequency Probing System is a
general-purpose analytical probe station designed for probing various geometries

from 10 mils to 1 micron. It is equipped with a Signatone QuieTemp DC Hot

Chuck System model S-1060. The system is capable of conducting

measurements in a temperature range from room temperature to 300°C.

However, for this study room temperature was used.

A set of four multipurpose, high speed, passive, model 10 GGB

picoprobes are used with this probing station. The range of operation for those

20

specific picoprobes is dc to 3.5Ghz. Although only do was used here, the probe
construction is of advantage for low noise measurement. The probes used have
shielded coaxial connections and gold plated tips. The whole system is shielded
with a Signatone Light-Tight box model PSDB-1160 to protect the measurements
from any noise signals (photoconductive) that may disturb the accuracy of the
output measurements. Additionally, electromagnetic shielding was used. Figure

10 shows the probing station and Figure 11 shows a close-up of the probed

wafer.

 

Figure 10. A picture of the probing station used for I-V measurements

21

 

Figure 11. A close-up picture of the probed wafer

Furthermore shielded coaxial cables were used to connect each SMU channel
from the probe station to the HP-41458. The shielding from the probe to the HP-
4145B helps in keeping the l-V data from being corrupted by other nearby

equipment operating.

3.3.3 HP-41458 Semiconductor Parameter Analyzer

The HP-414SB Semiconductor Parameter Analyzer and later variations on
this model, represent a popular piece of equipment used to obtain l-V data. It is
equipped with four programmable Source/Monitor units (SMU's). Each SMU can

be set up to function as a voltage source/monitor, current source/monitor, or

22

 

Figure 12. The HP-41458 Semiconductor Parameter Analyzer

common source (ground). A simplified circuit diagram of an SMU is illustrated in

Figure 13.

23

Voltage Current Monitor

 

 

 

 

 

Source
- A +
V
Common Source
0 \mdqsmu
out
Common Current Source TI
- +

Figure 13. HP-414SB Source/Monitor Unit Simplified Circuit Diagram [7]

The particular model of the HP-4145B we were dealing with used its
proprietary operating system that was not compatible with Windows/DOS.
Therefore data could not be simply transferred using a diskette. Also setting up
the HP-41458 to take measurements is not very simple and takes a bit of time,
since large amounts of data was needed. Thus to solve these two issues, a
computer program using GWBASIC was created to setup and transfer measured
data from the HP-4145B.

Another important thing to note about the HP-4145B is that it should be
kept on for a good amount of time (+1 hour) before taking any measurements. It
was noticed that when the HP-414SB was turned on and then repeated l-V

measurements were made on a diode, the data was not consistent. When the

24

HP-41458 was left on overnight and then measurements were made that data

was consistent in its repeatability.

3.3.4 HPIB Card and Program

The Hewlett Packard Interface Bus (HPIB) card is essentially used for
communication with various instruments and particularly in this case to
communicate with the HP-414SB. The HPIB card is what allows us to ‘talk' and
‘Iisten’ to the HP-414SB using a computer. What is meant by ‘talking’ is the
computer sends information to the HP-4145B, for example how to set up the
equipment, how to display the measured data and when to begin to take
measurements. ‘Listening’ primarily refers to the transferring of data from the
HP-414SB to the computer. Details for how to exactly ‘talk’ and ‘listen‘ to the HP-
41458 are found in Appendix B.

The GWBASIC program running under DOS that was written to remotely
control the HP-4145B was an essential part of the project to obtain large
amounts of l-V data. The program itself is attached as Appendix A, as well as a
detailed summary of the program used attached in Appendix B. The program
was not completely perfected. It had certain issues that were not resolved due to
time restrictions, but still was good enough for extracting the needed data.

One of the issues that could not be resolved was the ‘random crashing” of
the program. The program would stop at random times and about 1 out of every
10 measurements crashed. Sometimes it would crash when setting up the HP-

41458 and other times when transferring the data from the HP-414SB to the

25

computer. Due to the crashing randomness and time constraints the problem
was not looked into with great detail nor resolved. A computer with a better
processor and more memory was used but showed no improvement. Even with
this problem, using the program was much more efficient that not using it.
Another issue that existed was specifically for setting up the stepping
function. It was found that the amount of steps per measurement could only be
30 or less. When a number of steps value larger than 30 was entered the HP-
41458 would set the number of steps to 5. While this little annoyance was not
resolved it was fine due to the fact the larger the number of data points the

program needed to transfer, the more likely chance it would crash.

3.4 Data Manipulation

The drain current data required for the shift and ratio method as well as
the modified shift and ratio method contains noise even with all the shielding
used. Thus a ‘running average’ was used to ‘average out’ random noise in the
data. This was done for each gate voltage by adding to its S-function value the
S-function value of two voltage steps above and two voltage steps below that
particular voltage and then dividing by five to obtain the averaged S-function
value.

For the shift and ratio method the derivative is needed of the total
resistance with respect to the drain voltage to obtain the S-function value for a
particular gate voltage. The derivative for a particular voltage was obtained

numerically by determining the slope of a line connecting a one data point above

26

and one below this particular point. Excel was used for all data manipulation, i.e.
obtaining the running averages, the slopes, and the r values as a function of 6

(see Section 2.3).

27

CHAPTER 4

SHIFT AND RATIO RESULTS

4.1 Introduction

Chapter 4 reviews the shift and ratio results obtained in this project.
Section 4.2 reviews the results for devices that do not contain halo implants.
Using the shift and ratio method as described in Taur’s publication [3] we attempt
to find the effective channel length of these particular devices given to us by IBM.
Section 4.3 describes the results obtained using both the shift and ratio method

and the modified shift and ratio method on devices containing halo implants.

4.2 Non-Halo Devices

Once all the necessary l-V data needed is obtained as described in
Section 3.2 the data was placed into an Excel file. The r values and the S-

functions for both long and short channel devices are calculated for each gate

28

Table 1. Excerpt of l-V data used when applying the shift and ratio method

 

Vd

0.05
0.05
0.05
0.05
0.05
0.05
0.05

 

V9

0.80
0.81
0.82
0.83
0.84
0.85
0.86

L = .21
Id

2.86E-05
3.14E-05
3.42E-05
3.72E-05
4.02E-05
4.34E—05
4.65E-05

L = 8.4
Id
6.90E-07
7.60E-07
8.31 E-07
9.05E-07
9.83E-07
1.07E-06
1 .1 5E-06

L = .21
Rd
1.75E+03
1.59E+03
1.46E+03
1.34E+03
1.24E+03
1 .1 5E+03
1.07E+03

L = 8.4
Rd
7.25E+04
6.58E+04
6.02E-l-04
5.52E+04
5.09E+04
4.69E+04
4.35E+04

L = .21

Sfunc
1 .67E+04
1 .43E+04
1 .25E+04
1 .08E+04
9.54E+03
8.51 E+03
7.42E+03

L = 8.4

Sfunc
7.28E+05
6.17E+05
5.30E+05
4.64E+05
4.16E+05
3.69E+05
3.18E+05

 

 

voltage as described in Section 2.3 and as illustrated in Table 1. Once all the 8-
functions are calculated, they are plotted as can be seen in Figure 14 below. For

specific information on the methods used to calculate the S-function as well as

the ratio r for different 6 shifts refer to Appendix D.

 

1.00E+09

S-function vs. Vg plot with Vd = 0.05V
Non-Halo device

 

 

1.00E+08

1.00E+07

 

1.00E+06

 

 

 

I:
g 1.ooe+os

c
3 1.005+04

 

 

 

d1

1.00E+02

 

1.00E+03 «e

 

 

+L=0.21u
+L=8.4u

 

 

 

 

1.00E+01

 

 

1.00E+00

 

 

 

0.2

0.4

0.6

0.8
VII

1.2

1.4

1.6

 

Figure 14. Semi-log plot of S-function vs. V9 with Vd = 0.05V

29

 

The short channel device S-function data Si is then shifted by 6 values.

Next the ratio between the S-function of the long channel device 80 over the S-
function of the short channel device for different 6 shifts in the short channel

device is calculated and plotted. For example, to shift Vt for the smaller device,
Vti, by -0.01 volts relative to the large device, such that

6=Vt0-Vti =0.01volts (13)
we plot using Excel SO(N) and Si(N-1) vs. Vg (N). For each shift of ‘A’ rows, the

ratio of S-functions,

= fRN)

r .
SRN+A)

(14)

is calculated and plotted. Detailed discussion of the spreadsheet manipulation is

in Appendix D. The results can be observed in Figure 15.

30

 

Plot of r vs. Vg for Vd=0.05V
Non-Halo device

6.00E+01

5.50E+01
\ \.

5.00E+01

- 'fi w‘.
j. 'K// "‘%
» no a shift
+6 shift -0.01
4.505+01 ~ -—~»—.—————

W . ’ ' ‘ +asma+0.01

- . W +ashirt-o.02
4.00E+01

3.SOE+01

 

 

 

 

ratio :-

 

 

 

 

 

 

 

3.00E+01 . . - 4 ,
0.7 0.8 0.9 1 1.1 1.2 1.3

V9

 

 

 

 

Figure 15. Ratio plot for various 6 ‘shlft’ values

The ratio plotted in Figure 15 shows a positive slope for a 6 shift of
+0.01V, a primarily positive slope for no shift, and a primarily negative slope for a
6 shift of -0.01V. The data shows more experimental variation then would be
ideally desired. However, it was estimated from this data that a 6 shift of -0.005V
gives the closest to zero slope, and that the ratio value for this shift is
approximately 45. Since a ratio ‘r’ value of 45 does not equal the geometric
mask ratio of 40, the shift and ratio method indicates a non-zero AL. The

calculations are as follows.

Limask =0.21um

31

0
Lmask = 8.41.012

r a 45 which is obtained from Figure 15

Using these values along with equation 7 we can calculate a AL value using the

shift and ratio method a described in Section 2.3.

45 - (0.21pm - AL) - (8.41.071 - AL) =>
44 - AL - 45 - 0.21m — 8.4m => AL - 0.0255um - 25.5nm

(15)

The AL value obtained is a reasonable result. In comparison, Taur obtained a

value of about 60nm [3]. A difference is not unexpected since the devices used
by Taur had a traditional source and drain, while the devices used in this project
are devices with lightly doped drains (LDDs). This is known to cause variations

when solving for AL using the shift and ratio method [3].

4.3 Halo Devices

After the data for devices containing the halo implants was obtained, the
data was placed into an Excel file and its manipulated as described in Section
3.4 as well as Appendix D. First the S-functions for the devices with gate length

L = 0.21pm and L = 8.411m are plotted, as can be seen in Figure 16 below.

32

 

S-function vs Vg plot for Vd=0.05V
Halo device

 

10000000
1000000 \
100000 \
10000
+ L=0.21u
+ L=8.4u
1000 \\

100

 

 

 

 

 

 

 

 

s-function

 

 

10

 

 

 

0.4 0.6 0.8 1 1.2 1.4 1.6
V9

 

 

 

Figure 16. Semi-log plot of S-function vs. V9 with Vd=0.05V

The short channel device S-function data is then shifted to the left in order

to find 6 as described in Section 2.4. Figure 17 shows the plot of r(6,Vg) vs. V9

for different 6 values.

33

 

50

Ratio r vs. Vg plot for Vd=0.05V
Halo device

 

45

 

4o

 

ratio r

35

 

30

 

 

25

 

 

 

 

0.7

 

0.8 0.9 1 1.1 1.2
V9

1.3

 

 

+6 shift -0.10

4 a shift -0.12
+6 shift -0.14
—o— a shift -0.16
+3 shift -0.18

 

 

Figure 17. Ratio plot for various 6 ‘shift’ values

The ratio plotted in Figure 17 shows a positive slope for a 6 of -0.12 and a

primary negative slope for a shift of -0.16. From the plotted data it was estimated

that a 6 of 014 gives the closest to zero slope, and that the ratio value for this

shift is approximately 37. Since a ratio ‘r’ value of 37 does not equal the

geometric mask ratio of 40, the shift and ratio method once again indicates a

non-zero AL. Using the above information, we apply the shift and ratio method

on these devices containing halo implants. Using equation 7 as well as the

following values listed below a AL value is calculated.

1'
Lmask

= 0.21pm

34

 

 

0
ALUUTCIS1L '313.4111172
r a 37 which is obtained from Figure 17

37' (0.21pm -AL) - (8.4m -AL) => (16)
36' AL - 37:021er - 8.4m =9 AL - -0.0175um - —17.5nm

The negative AL value that is obtained appears unphysical, however it actually
agrees with van Meer’s publication [1] on the issues that exist when applying the
shift and ratio method on devices containing halo implants. A negative AL from
the shift and ratio is a motivation for the modified shift and ratio method.

In order to apply the modified shift and ratio method a second short
channel device is required. The S-functions for the devices with gate length L =

0.42pm and L = 8.4um are similarly plotted, as can be seen in Figure 18 below.

 

S-function vs. Vg plot for Vd=0.05V
Halo device

 

10000000

 

1000000

 

 

100000

 

-+- L=0.42u
+L=8.4u

 

 

 

S-function

 

 

10000

 

 

 

1000

 

 

 

0.4 0.6 0.8 1 1.2 1.4 1.6
V9

 

 

 

Figure 18. Semi-log plot of S-function vs. V9 with Vd = 0.05V

35

The short channel device S-function data is then shifted to the left in order to find

6 as described in Section 2.4. Figure 19 shows the plot of r(6,Vg) vs. V9 for

different 6 values.

 

Ratio r vs. Vg plot for Vd=0.05V
Halo device

22

 

., \
.. V3 [Em/My
U

19 -

 

 

 

+6 shift -0.08V
6 shift -0.10V
,8 +6 shift -0.12V

,. ,fi /

1“

ratio r

 

 

 

 

 

 

 

 

15

 

0.7 0.8 0.9 1 1.1 1.2 1.3
V0

 

 

 

Figure 19. Ratio plot for various 6 ‘shift’ values

The ratio plotted in Figure 19 shows a primarily positive slope for a 6 of .-
0.08 and a primarily negative slope for a shift of -0.12. From the plotted data it
was estimated that a 6 of -0.10 gives the closest to zero slope, and that the ratio
value for this shift is approximately 18.5. Since a ratio r value of 18.5 does not
equal the geometric mask ratio of 20, the shift and ratio method again indicates a
non-zero AL. Using the above information, we apply the shift and ratio method

on this other pair of devices containing halo implants. Using equation 7 as well

36

as the following values listed below a AL value is calculated.

LJ'

0 _
Lmask - 8.411":

r 518.5 which is obtained from Figure 19

18.5 ' (0.42pm - AL) -(8.4).1m - AL) =
17.5 - AL -18.5-0.42um - 8.4m = AL = -0.036um a —36nm

(17)
This negative AL value that is obtain once again agrees with van Meer’s
publication [1] on the issues that exist when applying the shift and ratio method
on devices containing halo implants.

Observing that the application of the shift and ratio method to the two
short channel devices along with the long channel device results in unphysical

results, the modified shift and ratio method is now applied.

For 0.21 pm and 8.4um channel length devices:

Li

mask =0.21um

0 _
Lmask — 8.41mi

r e 37 this value is obtained from Figure 17

For 0.42pm and 8.4um channel length devices:

LJ'

mask =- 0.42pm

0
Lmask = 8.411111

r 218.5 this value is obtained from Figure 19

37

r»' 3017i;

Using these values as well as equations 11 and 12, we obtain two equations and

two unknowns:

a C- (8.4um—AL)

 

 

37 (0.21pm-AL) (18)
= .(8.4um—AL)
18.5 C (“MAI“) (19)

Dividing equation 18 by 19 reduces the two equations with two unknowns to a
single equation that now can be solved for AL.

2 0 _ (0.42pm — AL)
' (0.21m — AL)

 

=>AL=O (20)

With a AL = 0, C can now be solved for and yields: C = 0.925. The results are
consistent with the initial hypothesis of the long and short channel length devices
having a different effective mobility. The results indicate that the modified shift
and ratio method does offer the potential to resolve the issue that existed of
obtaining negative AL values when applying the standard shift and ratio method.

A detailed error analysis of the experimental results has not been
performed. However, examination of Figures 17 and 19 indicate an approximate
uncertainty in ratio r values of :2%. With this uncertainty one could
conservatively consider that our r values could range from 36 to 38 for the L =
0.21mm device and from 18 to 19 for the L = 0.42mm device. Using equations
18 and 19 we find the resulting AL can range from —25nm to +21nm. Note that
the small amount of error in the ratio r value can produce significant variation in
AL results. A larger amount of measurements can be taken and averaged to

reduce the amount of uncertainty that exists.

38

CHAPTER 5

SPICE MODELING

5.1 Introduction

The SPICE modeling portion of this work is of a preliminary nature. In this
investigation, the process of creating a device model began with a low level
SPICE model, level 2, due to its relative simplicity when compared to higher-level
models. Level 2 models do not include enough parameters to take into account
various effects for short channel devices, however they can produce a useful
basis for more advanced models. Section 5.2 discusses our attempts to create
level 2 models for the non-halo devices, and the issues that prevent us from
creating a reasonable model for the short channel devices at this model level.
Furthermore, some key parameters for the halo devices are also extracted and
discussed. Section 5.3 explains the need of a higher-level model to properly

design a model for the non-halo and halo devices.

5.2 Level 2 Models of Non-Halo Devices

In level 2, the DC l-V characteristics are primarily modeled by the equation

shown below [8].

39

F“ U. .t~";. I

' V
[Vgs’VFB‘2'|¢Fl"% 'Vds
eoxf W 1

Idsgu- )( )4 3 3 > (21)

tax Lefir l-U'Vds 2 - ”
1 -§.x[vd_, -Vbs +2°|¢FI]2 -(Vbs)+2'|¢F|2

 

 

 

L

In this expression,

 

kT N
|¢Fl-—ln(—A-). (22)
q "i
’2 . . . N
X = as q A ' 10x 1 (23)
50x

and 0 accounts for channel length modulation. Thus, for a given semiconductor

and temperature, one provides geometric information (W, L, 10x) and processing

parameters (NA, VFB or Vt).

In order to extract parameters to create a level 2 SPICE model for the
non-halo devices we first obtain l-V measurement data. The data is obtained
using the 2-terminal measurement setup described in Section 3.2 and seen in

Figure 5. First for the long channel length device we plot the square root of the

drain current (Id) vs. its respective gate/drain voltage (Vd = V9). The results are

plotted in Figure 20. A straight line along the curve is then drawn to

approximately find where the line intersects the Vd = V9 axis. For the long

channel non-halo device, the line intersects at approximately 0.6775 volts; this

value is defined as the threshold voltage for this particular device.

40

 

sqrt(Id) vs. Vd=Vg plot for L = 8.41.1
Non-halo device

 

1.205-02

 

1.005-02
8.ooe-03~—— --——~ _ —. —_—--__._____fl __ '_ A 4
5005-03
4.005-03

2.005-03 /
o.ooe+004_———-/ .

o 0.5 / 1 1.5 2 2.5
Vd=Vg

 

squad)

 

 

 

 

 

 

 

 

Figure 20. Id vs. Vd = V9 for non-halo device, L = 8.4p.m

The slope of this line used to find the threshold voltage is also used to

determine [.1 / tax. as seen from the SPICE level 1 equation,

 

(Pile; V _V,)2=A1/73- L121. (24)

We were informed by IBM that the non-halo devices were thick oxide devices

with 10x = 5.8nm. This allowed us to calculate the effective mobility, 11, using the

above equation to obtain the following result:

/M = 8.09110“3 =5 )1 = 221cm2/V ~ 3 (25)
2' tax

ln level 2, the NFS parameter is used to model sub-threshold current.

41

Changes were made to this parameter until the SPICE model and actual data

agreed. A value of 3.7 x 1012 cm.2 was chosen for NFS. The channel mobility is

smaller than the bulk material because of increased scattering at the Si/Si02

interface and is approximately half the bulk mobility [9]. Thus using this mobility

value, if taken to be half the bulk mobility, would indicate a substrate doping of

approximately 4 x 1017 cm'2.

However, modeling results show that this value was too high, and

changes were made to this parameter until the simulation data matched the

experimental data. A final NSUB value of 2 x 1016cm'3 was chosen. In actuality,

the device is formed in an n-type well, with a higher concentration near the

surface (which determines u) and a lower concentration at depth (which effects
01:). Using all the parameters described above, the final SPICE model used was:

PSPICE NFTK MOSFET L = 8.4
vs1 1 0 2

M1 1 1 0 0 N84

.00 vs1 0.02 2 .02

.MODEL N84 NMOS(LEVEL=2 L=8.4u W=8.4u VTO=0.6775 uo=221
+TOX=5.8n NFS=3.7e12 NSUB=2e16)

.PRINT DC lD(M1)

.PROBE

.END

The results of the model compared to the actual 2 terminal l-V data are shown in

42

Figure 21 (linear scale) and Figure 22 (semi-logarithmic scale). Excellent

agreement is observed for both low and high currents.

 

Id

 

1.20E-04

1.00E-04

8.005-05

0.00E-05

4.00E-05

2.00E-05

0.00E+00 I 23‘

Id vs Vd I Vg plot of measured and modeled data for L 8 8.4um

 

 

 

 

 

 

 

 

 

 

Non-halo device
'2”
.1
.2
'5.
o1
.1
.1
H
If
H
Irv!
fl.
I1
01
.1‘
d"
.1-
d
'1
'1
fl.
:4
4"
.t‘
v:
.1:
.zi‘u
.g'r“
332‘
0. .“
1 —--v':.:"'":f
0 0 5 1 1 5 2

Vd I Vg

2.5

 

 

+exp L = 8.4u
‘ sim L = 8.4u

 

 

Figure 21. Simulated and measured data using Figure 5 setup

(Linear Scale)

43

 

 

 

Id vs Vd=Vg plot of measured and modeled data for L=8.4u
Non-halo device

0 0.5 1 1.5 2 2.5
1 .00E-03 ‘ L ‘ ‘

 

1.00E-04 ""

M-

100505 ##3/
1005-06 / --9— exp L=8.4u

 

 

 

Id

 

 

 

~-+ ~ sim L=8.4u

 

1 .00E-07

 

 

1.00E-08
p

 

 

 

1.00E—09

 

 

Vd-Vg

 

Figure 22. Simulated and measured data using Figure 5 setup
(Semi-log Scale)

Family of curve measurements and modeling were also made using the 3-
terrninal setup described in section 3.2 and seen in Figure 7. A SPICE model
was created using the same parameters used for the previous model.

PSPICE NFTK MOSFET L = 8.4

V81 1 0 2

V82 2 0 2

M1 1 2 0 0 N84

.DC VS1 0.02 2 .02

.STEP V82 0.5V 2V .5V

.MODEL N84A NMOS(LEVEL=2 L=8.4u W=8.4u VTO=0.6775 UO=221

+TOX=5.8n NFS=3.7e12 NSUB=2e16)
.PRINT DC lD(M1)

.PROBE

.END

For the family of curves configuration, where V9 .4 Vd, the simulation data from
the SPICE model does not match the measured data as well as when V9 is

constrained to equal Vd in the two terminal case. The modeling vs. experimental

result is shown in the Figure 23.

 

Id vs Vd plot for L I 8.4u
Non-Halo device

1.20E-04

‘ DOE.“ fl

8.00E-05 __._ V9 3 5v
+Vg at 1V
+Vg = 1.5V

6.00E-05 " V9 = 2v

+ sim Vg=.5

+ sim V9=1
sim V9215

—- sim V982

 

 

 

 

 

 

 

 

 

4.00E-05 -

 

2.00E-05 -

 

 

 

2.5

 

 

 

 

Figure 23. Simulated and measured data using Figure 7 setup

45

Here, one sees that the simulation and experimental agree well in saturation,

where (V9 - Vd) < Vt. However, in the linear region where (Vg — Vd) > Vt, the

simulation produces a smaller current than actually measured.
We then similarly extracted the threshold voltage of the short channel

length device to create a SPICE model of this device. Using the same technique

described above, a threshold voltage, Vt = 0.593 V is obtained. Note that the

difference in extrapolated threshold voltages is about 0.1 volts, and recall that the
6 shift found for the non-halo devices was only 0.005 volts in Section 4.2. In
principal, one would expect to find the same result from both methods for finding
6, as for example observed by Taur. The difference may again be due to the fact

that different

46

 

Sqrt(ld) vs. Vd = Vg plot for L = 0.21u
Non-halo devices

6.005-02
5.005-02 / A
4.005‘02 //

3.006-02

 

 

 

 

 

F+~L==0210

Sqftfld)

2.006-02

1.00E-02
0.00900 14 . . -
0 07] 1 1.5 2 2.5

Vd=Vg

 

 

 

 

 

 

 

 

Figure 24. Id vs. Vd = V9 for non-halo device, L = 0.21pm

devices were used in comparison to Taur’s. The devices we used had lightly
doped drains (LDDs), which is known to create issues for the extraction of the
effective channel length of devices [3]. One may also observe drain-to-source
electric field dependent mobility in Figure 24, at higher drain voltages.

Using these values another SPICE model was created for the short
channel device.

PSPICE NFT K MOSFET L = .21

V81 1 0 2

M1 1 1 0 0 N21

.DC V81 .02 2 .02

47

r“...

.MODEL N21 NMOS(LEVEL=2 L=.21u W=8.4u VTO=0.593 UO=221

+TOX=5.8n NFS=3.7e12 NSUB=2e16)

.PROBE

.PRINT DC ID(M1)

.END
As might be anticipated, this SPICE model did not correlate well at all with the
measured short channel data. The AL value was then taken into account, but not
much of an improvement at all was noticed. The comparison of the simulation

data with the actual data is plotted below in Figure 25 with a linear scale.

 

Id vs Vd I Vg plot of measured and modeled data for L 8 0.21 um
Non-Halo device

1.20E-02

 

1.00E-02 I

/

6.00E-03
2 / + exp L = 0.210
+sim L = 0.21u

4.00an

2.00E-03

 

 

 

 

 

 

 

 

 

 

0.00E+00

 

 

 

-2.00E-03 ,

 

Vd I Vg

 

 

 

Figure 25. Simulated and measured data using Figure 5 setup

Many short channel length attributes cannot be modeled properly with low-level

48

SPICE models and the results show that higher-level models would be necessary
to accurately model these devices.

Although SPICE modeling was not performed with the halo devices, the
measured data to be compared against simulation is presented here. The
threshold voltages for all three of the halo devices were extracted as described
previously in this section. Figure 26 shows the square root of the drain current

vs. gate voltage for the long channel device.

 

Sqrt(ld) vs Vg-Vd plot for L I 8.4a
Halo device

1.60E-02

 

[I

1 .40E-02 /
1 .20E~02 /

 

 

 

1 .00E-02 /
wow

4.00503 /
2.001503

o.ooe+0o ..J . . .
0 As 1 1.5 2 2.5

Vd-Vg

 

sqrttldl

6.00E-03

 

 

 

 

 

 

 

 

 

Figure 26. Id vs. Vd = V9 for halo device, L = 8.4p.m

A threshold voltage of, Vt = 0.5 V is extracted from the Figure 26. This

value along with the threshold voltage of both of the short channel devices allows

us to analyze the 6 shift value we obtained by performing the modified shift and

49

ratio method. Figure 27 plots the drain current vs. the gate and drain voltage for

the device with L = 0.4Zum.

 

Sqrt(ld) vs Vd-Vg plot for L I 0.42u
Halo device

6.00E-02

 

 

5005-02 1

4005-02 /
3...... /
2005-02

/
/

0 0.5 1 1.5 2 2.5
vu-va

 

 

sordid)

 

1.00E-02

 

 

 

0.00E +00

 

 

 

 

Figure 27. Id vs. Vd = V9 for halo device, L = 0.42pm

A threshold voltage of 0.54 V was extracted from Figure 27, which would

indicate Vto — Vti = -0.04 V. However, the 6 needed to find a constant ratio r

value was of -0.1 V which, as was the case for the non-halo devices, different
than the plot extraction using the shift and ratio method.

Similarly for the short channel device with L = 0.21pm, a threshold voltage

value of Vt = 0.58 V was extracted from the Figure 28.

50

 

Sqrt(ld) vs Vd-Vg plot for L I 0.21u
Halo device

7.00E-02

 

6.00E-02 J 1

5005-02 // -1
4.005-02 //

3.005-02 /
/ _,
1.00E-02 /

0.005+00 —/

 

“MINI

 

 

 

 

 

 

 

 

Figure 28. Id vs. Vd = V9 for halo device, L = 0.21pm

The expected 6 = Vto - Vti = -0.08 value once again does not match the

actual 6 (-0.14V) shift required to obtain a constant ratio r value. It appears that
the 6 shift value does not necessarily have to be the difference in extrapolated
threshold voltages for devices containing halo implants.

We also note for the devices containing halo implants that the short
channel devices have a larger threshold voltage when compared to the threshold
voltage of the long channel device. Furthermore, publications found online state
the large increase in threshold voltage for short channel devices containing halo
implants [10]. Figure 29 shows a comparison of threshold voltage from that

source as a function of the channel length, for devices with no halo, halo, and

51

strong halo implants.

 

 

 

 

 

0.45
.. WM“ 3‘. strong halo
0.351» a $.36“
E 0.25 I 55"." €945.11. “a.“
5 .. ,‘N‘ .1‘111. ""°‘"
0.15.. i“, . no halo
0.05 ..
v ‘IAJ : v v t 1
0.0 0.05 0.10 0.15 0.20 0.25 0.30 0.35
Le(un0

 

 

 

Figure 29. Threshold voltage vs. channel length for various devices [10]

From the previous level 2 SPICE models one can conclude that higher-
level models are needed to properly model these devices, which are not typical.
According to the SPICE manual, BSIM3 models are known to be able to model

major effects in deep-submicrometer MOSFET’s, including nonuniform doping.

5.3 BSIM3 Modeling

In order to properly model the short channel devices along with the
devices containing halo implants a higher level SPICE model is needed. The

BSIM3 model has the ability to incorporate many of the features found in the

52

devices in this study, such as with lightly doped drains (LDDs) and halo implants.
The BSIM3 model also includes many parameters that can model many of the
short channel effects that exist. Unfortunately, due to the limited amount of time
and the high degree of complexity these models can reach, BSIM3 models for

the devices we used were not created in this investigation.

53

CHAPTER 6

CONCLUSION

6.1 Introduction

Chapter 6 wraps up the thesis. Section 6.2 describes what has been
accomplished and what the results mean. Section 6.3 suggests the possibilities

in terms of future work with this modified shift and ratio method.

6.2 Summary of Results

The modified shift and ratio method seems to have provided some fair
results. Even though a AL value of zero was found, a C value less than one was
also found. This value of C represents that the effective mobility in the short
channel device is indeed smaller than in the long channel device. Also when
initially applying the shift and ratio method to the devices containing halo
implants, we obtained unphysical negative AL values, but when applying the

modified shift and ratio, we obtain a more physically realistic result.

6.3 Future Research

The results obtained with work done with the devices provided shows that
the modified shift and ratio method may work for devices containing halo

implants. To further verify the results obtained, an SEM cross-section of the

54

devices measured would give insight to how accurate the results obtained were.
From that point on one could improve the modified shift and ratio method
depending on how close the extracted effective channel length is to the actual
length of the device.

Work can also be continued on the modeling of the devices for both the
halo and non-halo devices. From the results obtained from the modeling it is a
clear assessment that higher-level models will be needed to not only properly
model the devices containing halo implants, but also to model the short channel

length devices with lightly doped drains.

55

APPENDICES

56

APPENDIX A

GWBASIC PROGRAM

57

5 I
10
1 5
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
1 05
1 10
1 15
120
125
1 30
135
140
145
150
1 55
160
165
170
1 75
180
1 85
1 90
195
200
205
210
21 5
220
222
225

Copyright Hewlett-Packard 1984, 1985, 1989

‘ Set up program for MS-DOS HP-IB l/O Library
' For use independent of the PC instrument bus system
DEF SEG

DATA &H32CD, &HOOCB

DIM GETDS%(2)

READ GETDS%(O): READ GETDS%(1)
ADDR% = VARPTR(GETDS%(0))

CALL ADDR%

CLEAR ,&HFC00

l=&HFCOO

‘ PCIB.DIR$ represents the directory where the library files

‘ are located

‘ PCIB is an environment variable which should be set from MS-DOS
‘ i.e. A:> SET PCIB=A:\LIB

' If there is insufficient environment space a direct assignment
' can be made here, i.e

' PCIB.DIR$ = "A:\LlB“

' Using the environment variable is the preferred method

PCIB.DIR$ = ENVIRON$("PCIB")
l$ = PCIB.DIR$ + "\IBHPIBLIB“
BLOAD l$,&HFC00

CALL 10%)

PCIB.SEG = 1%

' Define entry points for setup routines

DEF SEG = PCIB.SEG

IOABORT = 3
IOCLEAR = 6
IOCONTROL = 9
IODMA = 12
IOENTER = 15

IOENTERA = 18
IOENTERAB = 21
IOENTERB = 24
IOENTERS = 27
IOEOI = 30
IOEOL = 33
IOFASTOUT = 36
IOGETTERM = 39

58

230
235
240
245
250
255
260
265
270
275
280
285
290
295
300
305
31 0
31 5
320
325
330
335
340
345
350
355
360
365
370
375
380
385
390
395
400
405
41 0
41 5
420
425
430
435
440
445
450
455

IOLLOCKOUT = 42
IOLOCAL = 45
IOMATCH = 48
IOOUTPUT = 51
IOOUTPUTA = 54
IOOUTPUTAB = 57
IOOUTPUTB = 60
IOOUTPUTS = 63

IOPEN = 66
IOPPOLL = 69
IOPPOLLC = 72

IOPPOLLU =75
IOREMOTE =78

IORESET = 81
IOSEND = 84
IOSPOLL = 87
IOSTATUS = 90

IOTIMEOUT =93
IOTRIGGER =96
DEF.ERR =99

' Establish error variables and ON ERROR branching

PCIB.ERR$ = STRING$(64,32) : PCIB.ERR = 0

PCIB.NAME$ = STRING$(16,32) : PClB.GLBERR = 0

CALL DEF.ERR(PCIB.ERR,PCIB.ERR$,PCIB.NAME$,PCIB.GLBERR)
PCIB.BASERR = 255

ON ERROR GOTO 395

GOTO 460

’ Error handling routine

lF ERR=PCIB.BASERR THEN GOTO 410

PRINT "BASIC error #";ERR;" occurred in line ";ERL
STOP

TMPERR = PCIB.ERR

IF TMPERR = 0 THEN TMPERR = PClB.GLBERR
PRINT "HPIB error #”;TMPERR;“ detected at line ";ERL
PRINT "Error: ";PCIB.ERR$

STOP

' COMMON declarations are needed if your program is going to chain
' to other programs. When chaining, be sure to call DEF.ERR as
' well upon entering the chained-to program

59

460 COMMON PCIB.DIR$,PCIB.SEG

465 COMMON
DEF.ERR,PCIB.BASERR,PCIB.ERR,PCIB.ERR$,PCIB.NAME$,PCIB.GLBERR
470 COMMON
IOABORT,IOCLEAR,IOCONTROL,IOENTER,IOENTERA,IOENTERS,IOEOI,IOE
OL,IOGETTERM,IOLLOCKOUTJOLOCAL,IOMATCH,IOOUTPUTJOOUTPUTA,l
OOUTPUTS

475 COMMON
IOPPOLLJOPPOLLC,IOPPOLLU,IOREMOTE,IORESET,IOSEND,IOSPOLL,IOS
TATUS,|OTIMEOUT,IOTRIGGERJODMAJOPEN,IOENTERB,IOENTERAB,IOO
UTPUTBJOOUTPUTAB,IOFASTOUT

480 ‘

485 FALSE = 0

490 TRUE = NOT FALSE

495 NOERR = 0

500 EUNKNOWN = 100001!

505 ESEL = 100002!

510 ERANGE = 100003!

515 ETIME = 100004!

520 ECTRL = 100005!

525 EPASS = 100006!

530 ENUM = 100007!

535 EADDR = 100008!

540 COMMON FALSE, TRUE, NOERR, EUNKNOWN, ESEL, ERANGE,
ETIME, ECTRL, EPASS, ENUM, EADDR

545 ‘

550 ‘ End Program Set-up

555 ‘ User program can begin anywhere past this point

1000 O***********************ii****************************

1010 ' Connect to HP414SB, Begin Remote control

1020 O*****************************************************

1030 OPTION BASE 1

1040 INFO$ = SPACE$(13)

1050 DINFO = 20

1060 CODES$ = SPACE$(50)

1070 ISC=7 : PARA=17

1080 HP4145B = ISC * 100 + PARA

1090 CALL IORESET (ISC)

1100 IF PCIB.ERR <> NOERR THEN ERROR PCIB.BASERR
1110 TIMEOUT = 5

1120 CALL IOTIMEOUT (ISC, TIMEOUT)

1130 IF PCIB.ERR <> NOERR THEN ERROR PCIB.BASERR
1140 CALL IOCLEAR (ISC)

1150 IF PCIB.ERR <> NOERR THEN ERROR PCIB.BASERR
1160 CALL IOREMOTE (ISC)

1170 IF PCIB.ERR <> NOERR THEN ERROR PCIB.BASERR

4000 |********************* 3 terminal MOS measurement ***********************

401 0
4020
4030
4040

CLS : LOCATE 5, 15

PRINT "This program will perform a 3 terminal MOS measurement!"
CLS : LOCATE 6, 15

PRINT ”Perform the following connections before beginning

measurementsz"

4050
4060
4070
4080
4090
4100
4110
4111
4112
4120
4130
4140
4150
4180
4190
4200
4210
4230
4240

PRINT ""

LOCATE 8, 20

PRINT "- Connect the Source to SMU1 "

LOCATE 9, 20

PRINT "- Connect the Gate to SMU2“

LOCATE 10, 20

PRINT “- Connect the Drain to SMU3"

LOCATE 11, 20

PRINT "- Connect the Substrate to SMU4"

LOCATE 15, 15

PRINT ”Once finished choose one of the options below"
LOCATE 16, 20

PRINT " B - To Begin taking measurements”
LOCATE 17, 20

PRINT " Q - To QUIT program "

INPUT" ENTER LETTER OF YOUR CHOICE: "; B$
IF B$ = ”B" OR 33 = "b” THEN CLS : GOTO 4300
IF B$ = "Q" OR B$ = "q" THEN GOTO 9000

GOTO 4200

4300 l********************* HP41453B Setup ***********************
4310 INPUT ”Give filename where data will be stored ";FPUT$
4320 FPUT$=FPUT$+”.DA "

4330 INPUT "Start drain voltage (V): ";SVD

4340 INPUT "End drain voltage (V): ";EVD

4350 INPUT ”Drain voltage step (V): ”;VDSTEP

4360 INPUT ”Start gate voltage (V): ";SVG

4370 INPUT "Step gate voltage (V): ";VGSTEP

4380 INPUT ”Number of steps for gate voltage: ”;NUMSTEPS
4390 NDAT=(ABS(EVD-SVD)NDSTEP)+1

4400 GOSUB 8000

441 0
4420
4430
4440
4450
4460
4470
4480
4490

‘lnitialize data file
CLS

PRINT “"

PRINT ""

P RI NT ll******************************************************N

PRINT " Setting Up HP414SB - Measurements will begin shortly "
PRINT II******************************************************N

PRINT ""

I****** Setting up 41458 ******

CODES$="IT1 CA1 DRO BC“ : GOSUB 8500

61

4500
451 0
4520
4530
4540
4550

CODES$=”DE CH1,’VS','IS’,3,3” : GOSUB 8500
CODES$=”CH2,'VG','IG’,1 ,2" : GOSUB 8500
CODES$="CH3,'VD','ID',1,1": GOSUB 8500
CODES$="CH4,'VSB','ISB',3,3": GOSUB 8500
CODES$="VS1;V82;VM1;VM2": GOSUB 8500
CODES$="SS

VR1 ,"+STR$(SVD)+","+STR$(EVD)+","+STR$(VDSTEP)+",.1": GOSUB 8500

4560

CODES$="VP

"+STR$(SVG)+",”+STR$(VGSTEP)+","+STR$(NUMSTEPS)+",.1"z GOSUB 8500

4570
8500
4580
4590
4600
4610
4620
4630
4640
4650
4660
4670
4680
4690
4700
4710
4720
4730
4740
4750
4760
4770
4780
4790

CODES$="SM DM1 XN 'VD',1,"+STR$(SVD)+","+STR$(EVD): GOSUB

CODES$="YA 'ID‘,1,0,.1": GOSUB 8500

CODES$=”MD ME1": GOSUB 8500

INPUT ”Press F once HP4145B has finished taking measurements”; F$
IF F$ = ”F" OR F$ = "f" THEN CLS : GOTO 4630

GOTO 4600

PRINT ""

PRINT N******************************************H

PRINT " Transferring and Saving Data to Computer"
PRINT II******************************************fl
PRINT ""
CODES$="DO 'ID'” : GOSUB 8500
FOR M=1 TO NUMSTEPS
FOR N=1 TO NDAT
GOSUB 8700 'GET DATA
OPEN FPUT$ FOR APPEND AS #1
VDrain = SVD+(VDSTEP*N)—VDSTEP
VGate = SVG+VGSTEP*M-VGSTEP
PRINT VDrain VGate INFO$
PRINT #1, VDrain, VGate, mid$(lNFO$,2,12)
CLOSE(1)
NEXT N
NEXT M

4800 GOTO 8800

8000 1****************** 'NlT'AL'ZE DATA FILE ********************
8010 OPEN FPUT$ FOR APPEND AS #1

8020 PRINT #1 ’I'D/o*****************************************************
8030 ‘** PRINT #1 ,“% SAMPLE: "; SAMPLES

8040 PRINT #1 ,"IV measurement using HP4145B and probe station“
8130 CLOSE(1)

8140 RETURN

8300 l****************** CLOSE DATA FILE ********************
8310 OPEN FPUT$ FOR APPEND AS #1

8320 CLOSE(1)

8330 RETURN

62

8500 I******************** Talk to HP41458 **************************
8510 LENGTH=LEN(CODES$)

8520 CALL IOOUTPUTS(HP414SB,CODES$,LENGTH)

8530 IF PCIB.ERR <> NOERR THEN ERROR PCIB.BASERR
8540 RETURN

8700 1******************** Listen to HP41458 ************************
8710 CALL IOENTERS(HP4145B,INFO$,DINFO,ACINFO)

8720 IF PCIB.ERR <> NOERR THEN ERROR PCIB.BASERR
8730 RETURN

8800 I******t************** DATA READ DONE ************************
8810 GOSUB 8300

8820 PRINT '"'

8830 PRINT n**********taeeat-ktteteeen

8840 PRINT " Data Transfer Complete "

8850 PRINT IO************************H

8860 PRINT '"'

8870 INPUT "Press W once you have finished viewing data from HP414SB“;
H$

8880 GOTO 1000

9000 END

63

APPENDIX B

PROGRAM DETAILS

In order to efficiently extract large amounts data from the provided wafers
3 program had to be written that would interact with the HP-414SB
Semiconductor Parameter Analyzer. This particular HP—4145B was also an older
model, which saved all the data in its own format, which is not compatible with a
PC. The program used was created using GWBASIC code [11].

After installing the HPIB card software, a file (SETUP.BAS) is available
that contains the initializing/set-up code. This code is to be used at the beginning
of every program written, and runs from lines 5->555. These lines of codes
should not be changed, at line 1000 the user’s program begins. Note that the ‘ is
used to make comments in the program. At line 1030 the code sets the array
base to 1, so that numbering of the array elements begins at 1 instead of 0.
Variables are also defined, particularly the variables CODES$ and INFO$.

These are actually string variables of lengths 50 and 13 respectively, that are
used to send information to setup the HP-4145B and used to transfer the data
from the HP-414SB to the computer respectively. At line 1050, DINFO is defined
as a value that is used in other commands in the program and it specifies the
maximum number of elements to be read. Then in the program one has to
define the Interface select code (ISC) and Parameter Address (PARA). These
values are manually set on the card by switches or jumpers and on the HP-
41453 by back panel switches respectively. Whatever values are selected must
be defined in the program. Using the ISC and PARA, a new variable, ‘HP4145B'
is defined. This value is used in various commands that talk and listen to the HP-

4145B. Line 1090 sets the interface to its default configuration. The next line is

65

an error checking line that appears after every library command, which goes to
an error handling routine in the setup code. The next pair of lines (1110->1120)
defines a system timeout of 5 seconds in the event of a communication problem.
Line 1140 puts the HP-4145B into a device dependent state and line 1160 sets
the device in Remote. Both of these states are necessary for computer control of
the instrument.

The program then prints out on the screen a set of instructions for the
setup (lines 4000 -> 4240) of the probes (SMU's). The screen is first cleared
using the CLS command, then the cursor is located to a particular point on the
screen using the LOCATE command. The PRINT command prints out text on
the screen. Then the program is stopped giving the user time to setup the
probes and also the option to continue or quit. A pair of if/then statements
observe and perform the choice of the user. For this particular program, SMU1 is
the source, SMU2 is the gate, SMU3 is the drain, and SMU4 is the substrate.

Next a user interface is created such that the user can enter the voltage
values (lines 4300->4400) for the desired current measurements. First the user
is asked to give a filename (less than or equal to 8 characters) to store the
obtained data. Then the range of voltage values for the drain and gate is
requested. All these values are stored in variables that are then used to setup
the HP-414SB. Before the setup begins though, the program goes to a
subroutine that initializes and creates the data file. This occurs at lines 8000->
8140. Once finished with the subroutine, the program returns to setting up the

HP-41458.

66

First a subroutine is needed that will communicate to the HP-414SB what
type of source each probe will represent, over what range each source will vary,
as well as data display options. This subroutine is lines 8500-8540 in the
program. The subroutine sends the ‘CODESS’ string to the HP-414SB and sets
up the HP-4145B just as one would normally do manually. The ‘CODES$’ string
is first defined using program codes found in the HP-414SB manual [7]. Then the
information is sent to the HP-414SB, using the IOOUTPUTS command. This
occurs multiple times until the setup of the HP-4145B is complete.

First the method to take measurements is defined, also known as the
Integration Time, where 3 choices are available. IT1: short, lT2: medium, IT3:
long. This determines how long it takes the HP-414SB to take measurements,
and the longer the time the more accurate the measurement. Auto calibration is
turned on with code ‘CA1' and data ready service request is turned off with code
‘DRO’. The HPIB data output buffer must also be cleared before performing data
output from the HP-414SB. This is accomplished by sending a ‘BC’ code. In the
program these can be seen in line 4490.

4490 CODES$=”IT1 CA1 DRO BC” : GOSUB 8500

The channel definition page defines the connections that are being used
(in this case) to probe the wafer. The probe station has 4 connections (SMU’s)
and each one of these must be defined, and for this program the source is
defined as follows:

4500 CODES$="DE CH1,‘VS‘,'|S‘,3,3“ : GOSUB 8500

DE: Defines that you want to setup the channel definition page

67

CH1: This is the connection we are setting up, in this case SMU1.
VS: Names the source voltage as VS.

IS: Names the source current as IS.

3 (first): This defines that SMU1 is COM, i.e. the common, or ground connection.

3 (second): This defines that SMU1 is a constant function.

The gate is then defined as follows:

4510 CODES$=“CH2,‘VG','IG',1 ,2" : GOSUB 8500

CH2: This is the connection we are setting up, SMU2.

VG: Names the gate voltage as VG.

IG: Names the gate current as IG.

1: This defines that SMU2 is a voltage source.

2: This defines that SMU2 is a step function variable (On the HP-414SB display

screen, VAR2 is used for step functions).

The drain is then defined as follows:

4520 CODES$="CH3,'VD','ID',1,1“: GOSUB 8500

CH3: This is the connection we are setting up, SMU3.

VD: Names the drain voltage as VD.

ID: Names the drain current as ID.

1 (first): This defines that SMU3 is a voltage source.

1 (second): This defines that SMU3 is a sweep variable function (On the HP-

4145B display screen, VAR1 is used for sweep functions).

68

The substrate is then defined as follows:
4530 CODES$=”CH4,'VSB','ISB',3,3": GOSUB 8500
CH4: This is the connection we are setting up, SMU4.
VSB: Names the substrate voltage as VSB.
ISB: Names the substrate current as ISB.
3 (first): This defines that SMU4 is COM.
3 (second): This defines that SMU4 is a constant function.
Line 4540 turns off the other 4 SMU channels, which are not used:
(VS1,VS2,VM1,VM2)
4540 CODES$="VSI ;VSZ;VM1;VM2": GOSUB 8500
Then the source setup page for this particular case allows the user to
define the gate and drain voltages to be used to take current measurements.
The program first sets the drain voltage up as follows:
4550 CODES$="SS
VR1 ,“+STR$(SVD)+","+STR$(EVD)+","+STR$(VDSTEP)+",.1" GOSUB 8500
SS: Defines you want to setup the source setup page
VR1: This defines VAR1 to be a voltage source with a linear sweep. (VR2 would
be a log 10 sweep)
+STR$(SVD)+: Defines the start value, which was previously defined by the user
and stored as variable SVD.
+STR$(EVD)+: Defines the stop value, which was previously defined by the user

and stored as variable EVD.

69

+STR$(VDSTEP)+: Defines the step value, which was previously defined by the
user and stored as variable VDSTEP.

.1: defines the current compliance value in amperes.

The gate voltage is setup as follows:
4560 CODES$="VP
"+STR$(SVG)+","+STR$(VGSTEP)+","+STR$(NUMSTEPS)+",.1": GOSUB 8500
VP: This defines VAR2 to be a voltage source. VAR2 is a step function.
+STR$(SVG)+: Defines the start value, which was previously defined by the user
and stored as variable SVG.
+STR$(VGSTEP)+: Defines the step value, which was previously defined by the
user and stored as variable VGSTEP.
+STR$(NUMSTEPS)+: Defines the number of steps to be taken, which was
previously defined by the user and stored as variable NUMSTEPS.
.1: defines the current compliance value in amperes.

Then the measurement and display mode setup page is defined using
some of the previously values defined by the user.
4570 CODES$="SM DM1 XN ’VD',1,"+STR$(SVD)+","+STR$(EVD): GOSUB
8500
SM: Defines you want to setup the measurement and display mode setup page
DM1: Defines that we want to display the data in graphics form. (DM2 would
display in list form)

XN: Defines that you want to setup the x-axis

7O

VD: Defines that we want the x-axis to be the drain voltage
1: Define the x-axis to have a linear scale (2 would indicates log scale)
+STR$(SVD)+: minimum value for the x-axis

+STR$(EVD): maximum value for the x-axis

The y-axis is then setup is the next line of the program:

4580 CODES$="YA 'ID',1,0,.1": GOSUB 8500

YA: Defines that you want to setup the y-axis

ID: Defines that we want the y-axis to be the drain current

1: Define the y-axis to have a linear scale

0: minimum value for the y-axis

.1: maximum value for the y-axis

Then to begin to take measurements, measurement codes are used:
4590 CODES$="MD ME1": GOSUB 8500

MD: Defines that you will be defining measurement codes

ME1: Defines that a single measurement is to be taken. Other options allow
multiple runs to be taken and averaged.

Once the previous line runs, the measurements begin to be taken. When
the HP-414SB is taking measurements, a red LED on the front panel lights up,
and once finished, this LED shuts off. The user should not make keyboard
entries until this LED turns off. Once the light shuts off, the user should then

continue running the program by entering ‘F’ as requested by the program, this

71

allows the data needs to be transferred to the computer, which is done by putting
the data into the ‘Data Output Channel’ using the following program codes:
4680 CODES$=”DO 'ID'” : GOSUB 8500
DO: Defines what to put into the Data Output Channel
ID: Tells the HP-4145B to put the drain current data into the Data Output
Channel

Then a nested ‘for’ loop is created to transfer the drain current data with
respect to a specific drain and gate voltage. A subroutine within the nested ‘for’
loop transfers the data into the Data Output Channel to the computer in the
INFO$ string.
8710 CALL IOENTERS(HP414SB,INFO$,DINFO,ACINFO)
8720 IF PCIB.ERR <> NOERR THEN ERROR PCIB.BASERR
8730 RETURN
This string is then copied onto the data file along with its respective drain and
gate voltage. This is repeated until the nested ‘for’ loop ends, when all the
values measured are transferred.

For further reference on can check both the HP-4145B instruction manual

as well as the HP-IB Command Library.

72

APPENDIX C

MEASUREMENT DATA

73

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NF: 53¢ U 0F.- «F.F—n U 00: FE? U

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NF: 5:» U 0F.- 5:» U 00: 5:» U

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APPENDIX D

DATA MANIPULATION IN EXCEL

89

This appendix describes how the different values needed for applying the
shift and ratio method were determined. They are described in terms of the
columns and rows as well as the equations used in the Excel file.

The resistance (Rd) values for the short channel gate length device (column 5)
are calculated in the Excel files by dividing the first column (Vd) by the drain
current (column 3) for all gate voltages. Thus the Nth entry for the resistance

value would use the following equation.

Vd(N)
R N -— 26
d() IAN) ( )

The resistance of the long channel device is calculated similarly by using the
drain current values in column 4.

The S-function (Sfunc) for the short channel device (column 7) is calculated in
the Excel file by taking the difference between the resistance values for the short
channel device (column 5) divided by the difference in gate voltages (column 2)
for the respective resistance values. The absolute value of this division gives the

S-function value. The Nth entry for the S-function uses the equation below.

Si(N) - ab {Rd(N—1)—Rd(N+l) (27)

Vg(N -l) - Vg(N +1)

 

The S-function for the long channel device (column 8) is calculated similarly
using the resistance values from column 6.

The different ratio values are calculated by dividing the running average of
the S-function of the long channel device (column 8) by the running average of
the S-function of the short channel device (column 7). The Nth entry for the ratio

for a defined ‘d’ shift value is calculated using the equation below.

90

a SON—2,SO N-l,
r(N,6)- verage( ( ) ( )SO(N),S0(N+1),SO(N+2)) (23)

 

average(s‘ (N - 2 — 6),Si (N — 1 - 6),Si (N -6),Si(N +1— 6),Si(N + 2 — 5))

91

BIBLIOGRAPHY

92

[1] H. van Meer, K. Henson, J-H Lyu, M. Rosmeulen, S. Kubicek, N. Collaert,
and K. de Meyer, “Limitations of shift and ratio based Len extraction techniques
for MOS transistors with halo or pocket implants,” IEEE Electron Device Letters,
vol. 21, pp. 133-136, March (2000)

[2] K. K. Ng and J. R. Brews, “Measuring the Effective Channel Length of
MOSFETs,” IEEE Circuits and Devices, November, pp. 33-38 November (1990)

[3] Y. Taur, “MOSFET channel length: extraction and interpretation,” IEEE
Transactions on Electron Devices, vol. 47 pp. 160-170, January (2000)

[4] Y. Taur, D. S. Zicherman, D. R. Lombardi, P. J. Restle, C. H. Hsu, H. l.
Hanafi, M. R. Wordeman, B. Davari, and G. G. Shahidi, “A new shift and ratio
method for MOSF ET channel length extraction,” IEEE Electron Device Letters,
vol. 13, pp. 267-269, May (1992)

[5] J. W. Mayer, L. Eriksson, and J. A. Davies, “Ion Implantation in
Semiconductors,” Academic Press Inc, NY, 1970

[6] K. Miyashita, H. Yoshimura, M. Takayanagi, M. Fujiwara, K. Adachi, T.
Nakayama, and Y. Toyoshima, “Optimized Halo Structure for 80nm Physical
Gate CMOS Technology with Indium and Antimony Highly Angled Ion
Implantation,” IEDM, pp. 645-648, (1999)

[7] Hewlett-Packard, “Operation and Service Manual Model 41458
Semiconductor Parameter Analyzer,” Yokogawa-Hewlett-Packard, September
(1986)

[8] K.-S. Yeo, S. S. Rofail, and W.-L. Goh, “CMOS/BiCMOS ULSl Low
Voltage, Low Power,” Prentice Hall, NJ, 2002

[9] H. C. Casey, “Devices for Integrated Circuits’ Silicon and lll-V Compound
Semiconductors,” John Wiley, NY, pp. 349, (1999)

[10] S. Thompson, P. Packan, and M. Bohr, “ MOS Scaling: Transistor
Challenges for the 21St Century, “ Intel Technology Journal, Q3 (1998)

[11] Hewlett-Packard Co, “HP-IB Command Library for MS-DOS,” Hewlett-
Packard, Edition 2, June (1986)

[12] K. Ahmed, |. De, C. Osbum, J. Wortman, and J. Hauser, “Limitations of
the Modified Shift-and-Ratio Technique for Extraction of the Bias Dependence of
Left and de of LDD MOSFET’s,” IEEE Transactions on Electron Devices, vol.
47, pp. 891-893, April (2000)

93

[13] B. Cretu, T. Boutchacha, G. Ghibaudo, and F. Balestra, “New ratio method
for effective channel length and threshold voltage extraction in M08 transistors,“
Electronics Letters, vol. 37, pp. 717-719, May (2001)

[14] J. Y.-C. Sun, M. R. Wordeman, and S. E. Laux, “On the Accuracy of
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