Abstract With the high-speed development of electronic device, structural miniaturization and integration are the essential elements for new technology creation. Because of the physical limits of silicon-based transistor, needed to develop alternative channel for minimum 5 nm gate length devices, a brand-new materials(2D) such as graphene and MoS2 has be introduced in to the engineering study. To manufacture the ultrascaled electronic devices, the fabrication method and new material properties are the most important keys. At present, MoS2 has become to the most popular new semiconductor materials because of its own advantages in electricity, thermology and mechanics. These advantages make the MoS2 have a great potential value in Nano-scale electronic device and photoelectric device development. However, most of the scientific research about MoS2 devices were focused on the visible spectrum study, there is only few reports for MoS2 in near infrared because people indicated that 2D materials have a weakness in photoelectric response when it reaches into the near-infrared band. This argument not only blocks the path for 2D materials study but also slows down the development in wireless communication, super charging and autopilot applications. In this article, by using different micro-fabrication methods, we set our final goal as improving the photoelectric induction intensity for 2D materials and study the related application.
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