A new era of space exploration has been ushered in by a new generation of spacecraft with significantly reduced size, weight, and power (SWAP). Such new spacecraft include SmallSats, CubeSats, and even MicroSats, and they can operate as constellations to perform the complex and novel measurements. They cannot, however, carry the traditional complements of radiation and thermal shielding needed to survive the harsh space environments. This unique situation presents multiple challenges and numerous opportunities for innovative materials and devices with inherent resiliencies. In this thesis work, the response to heavy ion irradiation of multiwalled carbon nanotubes and carbon onions, as well as two sets of GaN nanowire based NanoFETs were investigated, the experiments are performed at the National Superconducting Cyclotron Laboratory (NSCL) at Michigan State University. Heavy Ions are a highly penetrating component in space environments, the access to NSCL enables the possibility of collecting these unique datasets providing insights on heavy ion interaction with this nanomaterial and devices. First, with the carbon-based nano-materials, experimental results were compared with results expected from two different models. The best-studied model for radiation interactions with carbon interaction through displacement knock-on collisions, which produce dangling bonds and interstitial carbon atoms . The dangling bonds and loose carbon atoms then rearrange into energy-lowering configurations. A new model for graphene layer rearrangement by zipping driven by dislocation migration mechanisms that are only available in multi-layer radial situations has been proposed recently. Evidence was found that multiwalled carbon nanotubes and multi-layer carbon onions respond to heavy ion irradiation with linking of neighboring graphene layers rather than knock-on collision generated amorphization. A possible mechanism based on dislocation migration is analyzed.Second, for GaN-based nanoFETS, this work presents candidate's results and analyses from the investigation of the first known real-time experimental data for Gallium Nitride (GaN) nanowire based field effect transistors (nanoFETs) real-time I-V performance during Xenon-124 relativistic heavy ion radiation. Analysis of such unique data sets opens the gateway for the studies of nanoFET device performance in radiation environments.Third, following the discovery with experimental data, a unique stability analysis is developed and used to enable new electron transport modeling using thermionic field emission at metal-semiconductor contact Schottky barrier. This enabled first-time extractions of barrier heights, carrier concentrations and tunneling transmission coefficients from experimental data. Further investigations with a metal-semiconductor-metal approach provides an unique look at all voltage drops across the nanoFET device as a function of radiation exposure. When the electronic investigation is combined with observed fundamental physical changes of the nanowire by radiation, new concepts of charge distribution and surface orientations of GaN nanowires emerges. Work to date and proposed investigations are presented as future work.Lastly, an initial investigation of surface acoustic wave enhanced quantum relay devices targeted to space-based quantum communication is presented as latest work. This study aligned with the current trend in the field of quantum communication technology; the thesis work contributions to a creative approach on how to achieve quantum entanglement with electrons, a surface acoustic wave device fabrication is also presented in the third part of this thesis.
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